Oshima, Takayoshi
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3

Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phas..:

Oshima, Yuichi ; Oshima, Takayoshi
Semiconductor Science and Technology.  38 (2023)  10 - p. 105003 , 2023
 
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5

Epitaxial relationship of NiO on ( 1̅ 02) β-Ga2O3:

Oshima, Takayoshi ; Nakagomi, Shinji
Japanese Journal of Applied Physics.  62 (2023)  12 - p. 128001 , 2023
 
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Self-aligned patterning on β-Ga2O3 substrates via backside-..:

Oshima, Takayoshi
Japanese Journal of Applied Physics.  62 (2023)  1 - p. 018004 , 2023
 
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10

Effect of the temperature and HCl partial pressure on selec..:

Oshima, Yuichi ; Oshima, Takayoshi
Japanese Journal of Applied Physics.  62 (2023)  8 - p. 080901 , 2023
 
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14

An Improved Z-Scheme for Overall Water Splitting Using Dye-..:

Hojo, Koya ; Nishioka, Shunta ; Miseki, Yugo...
ACS Applied Energy Materials.  4 (2021)  9 - p. 10145-10152 , 2021
 
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