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Ousten, J.P.
17
results:
Search for persons
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Online (17)
Mediatypes
Articles (Online) (15)
Bookchapter (Online) (1)
OpenAccess-fulltext (1)
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?
1
Using of bond-wire resistance as aging indicator of semicon..:
Ibrahim, A.
;
Khatir, Z.
;
Ousten, J.P.
...
Microelectronics Reliability. 114 (2020) - p. 113757 , 2020
Link:
https://doi.org/10.1016/..
?
2
Analysis of the degradation mechanisms occurring in the top..:
Dornic, N.
;
Ibrahim, A.
;
Khatir, Z.
...
Microelectronics Reliability. 88-90 (2018) - p. 462-469 , 2018
Link:
https://doi.org/10.1016/..
?
3
Effect of power cycling tests on traps under the gate of Al..:
Elharizi, M.
;
Zaki, F.
;
Ibrahim, A.
..
Microelectronics Reliability. 88-90 (2018) - p. 671-676 , 2018
Link:
https://doi.org/10.1016/..
?
4
Power cycling issues and challenges of SiC-MOSFET power mod..:
Ibrahim, A.
;
Ousten, J.P.
;
Lallemand, R.
.
Microelectronics Reliability. 58 (2016) - p. 204-210 , 2016
Link:
https://doi.org/10.1016/..
?
5
Investigations of thermal interfaces aging under thermal cy..:
Ousten, J.P.
;
Khatir, Z.
Microelectronics Reliability. 51 (2011) 9-11 - p. 1830-1835 , 2011
Link:
https://doi.org/10.1016/..
?
6
Study of thermal interfaces aging for power electronics app..:
, In:
2011 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium
,
Ousten, J.-P.
;
Khatir, Z.
;
Menager, L.
- p. 10-17 , 2011
Link:
https://doi.org/10.1109/..
?
7
Degradation behavior of 600V–200A IGBT modules under power ..:
Bouarroudj, M.
;
Khatir, Z.
;
Ousten, J.P.
...
Microelectronics Reliability. 47 (2007) 9-11 - p. 1719-1724 , 2007
Link:
https://doi.org/10.1016/..
?
8
Power module lifetime estimation from chip temperature dire..:
Coquery, G.
;
Carubelli, S.
;
Ousten, J.P.
...
Microelectronics Reliability. 41 (2001) 9-10 - p. 1695-1700 , 2001
Link:
https://doi.org/10.1016/..
?
9
An original DoE-based tool for silicon photodetectors EoL e..:
Spezzigu, P.
;
Bechou, L.
;
Quadri, G.
...
Microelectronics Reliability. 51 (2011) 9-11 - p. 1999-2003 , 2011
Link:
https://doi.org/10.1016/..
?
10
Selective activation of failure mechanisms in packaged doub..:
Deshayes, Y.
;
Bord, I.
;
Barreau, G.
...
Microelectronics Reliability. 48 (2008) 8-9 - p. 1354-1360 , 2008
Link:
https://doi.org/10.1016/..
?
11
Reliability investigations of 850 nm silicon photodiodes un..:
Bourqui, M.L.
;
Béchou, L.
;
Gilard, O.
...
Microelectronics Reliability. 48 (2008) 8-9 - p. 1202-1207 , 2008
Link:
https://doi.org/10.1016/..
?
12
Failure mechanisms and qualification testing of passive com..:
Post, H.A.
;
Letullier, P.
;
Briolat, T.
...
Microelectronics Reliability. 45 (2005) 9-11 - p. 1626-1632 , 2005
Link:
https://doi.org/10.1016/..
?
13
Detection and location of defects in electronic devices by ..:
Angrisani, L.
;
Bechou, L.
;
Dallet, D.
..
Measurement. 31 (2002) 2 - p. 77-91 , 2002
Link:
https://doi.org/10.1016/..
?
14
Localization of defects in die-attach assembly by continuou..:
Bechou, L.
;
Angrisiani, L.
;
Ousten, Y.
...
Microelectronics Reliability. 39 (1999) 6-7 - p. 1095-1101 , 1999
Link:
https://doi.org/10.1016/..
?
15
Ultrasonic images interpretation improvement for microassem..:
Bechou, L.
;
Ousten, Y.
;
Tregon, B.
...
Microelectronics Reliability. 37 (1997) 10-11 - p. 1787-1790 , 1997
Link:
https://doi.org/10.1016/..
1-15