Padovani, Andrea
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1

From Accelerated to Operating Conditions: How Trapped Charg..:

Vecchi, Sara ; Padovani, Andrea ; Pavan, Paolo.
IEEE Transactions on Device and Materials Reliability.  24 (2024)  2 - p. 194-202 , 2024
 
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2

Modeling Degradation and Breakdown in SiO2 and High-k Gate ..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
 
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3

Molecular Bridges Link Monolayers of Hexagonal Boron Nitrid..:

Ranjan, Alok ; O'Shea, Sean J. ; Padovani, Andrea...
ACS Applied Electronic Materials.  5 (2023)  2 - p. 1262-1276 , 2023
 
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4

Adhesion Microscopy as a Nanoscale Probe for Oxidation and ..:

Ranjan, Alok ; Padovani, Andrea ; Dianat, Behnood...
ACS Applied Electronic Materials.  5 (2023)  9 - p. 5176-5186 , 2023
 
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5

Insights into device and material origins and physical mech..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
 
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7

Electrically active defects in Al2O3-InGaAs MOS stacks at c..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
 
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8

Towards a Universal Model of Dielectric Breakdown:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
 
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10

The Major Effect of Trapped Charge on Dielectric Breakdown ..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
 
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14

Reliability of Non-Volatile Memory Devices for Neuromorphic..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
 
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15

Electron-assisted switching in FeFETs: Memory window dynami..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
Pesic, Milan ; Beltrando, Bastien ; Padovani, Andrea... - p. 4A.1-1-4A.1-8 , 2022
 
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