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Pakfar, A.
33
results:
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Online (33)
Mediatypes
Articles (Online) (18)
OpenAccess-fulltext (15)
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1
Modeling boron dose loss in sidewall spacer stacks of compl..:
Essa, Z.
;
Pelletier, B.
;
Morin, P.
...
Solid-State Electronics. 126 (2016) - p. 163-169 , 2016
Link:
https://doi.org/10.1016/..
?
2
Extended Point Defects in Crystalline Materials: Ge and Si:
Cowern, N. E. B.
;
Simdyankin, S.
;
Ahn, C.
...
Physical Review Letters. 110 (2013) 15 - p. , 2013
Link:
https://doi.org/10.1103/..
?
3
Enthalpy based modeling of pulsed excimer laser annealing f..:
Hackenberg, M.
;
Pichler, P.
;
Huet, K.
...
Applied Surface Science. 258 (2012) 23 - p. 9347-9351 , 2012
Link:
https://doi.org/10.1016/..
?
4
Evaluation and modeling of lanthanum diffusion in TiN/La2O3..:
Essa, Z.
;
Gaumer, C.
;
Pakfar, A.
...
Applied Physics Letters. 101 (2012) 18 - p. , 2012
Link:
https://doi.org/10.1063/..
?
5
Characterization and modeling of structural properties of S..:
Py, M.
;
Barnes, J. P.
;
Rivallin, P.
...
Journal of Applied Physics. 110 (2011) 4 - p. , 2011
Link:
https://doi.org/10.1063/..
?
6
Effect of Germanium content and strain on the formation of ..:
Fazzini, P.F.
;
Cristiano, F.
;
Talbot, E.
...
Thin Solid Films. 518 (2010) 9 - p. 2338-2341 , 2010
Link:
https://doi.org/10.1016/..
?
7
Transfer of physically-based models from process to device ..:
Bazizi, E.M.
;
Pakfar, A.
;
Fazzini, P.F.
...
Thin Solid Films. 518 (2010) 9 - p. 2427-2430 , 2010
Link:
https://doi.org/10.1016/..
?
8
Modeling of the effect of the buried Si–SiO2 interface on t..:
Bazizi, E. M.
;
Fazzini, P. F.
;
Pakfar, A.
...
Journal of Applied Physics. 107 (2010) 7 - p. , 2010
Link:
https://doi.org/10.1063/..
?
9
Experimental investigations and simulation of the deactivat..:
Martinez-Limia, A.
;
Pichler, P.
;
Lerch, W.
...
Materials Science and Engineering: B. 154-155 (2008) - p. 211-215 , 2008
Link:
https://doi.org/10.1016/..
?
10
Modelling of Boron Trapping at End-of-Range defects in pre-..:
Bazizi, E.M.
;
Fazzini, P.F.
;
Zechner, C.
...
Materials Science and Engineering: B. 154-155 (2008) - p. 275-278 , 2008
Link:
https://doi.org/10.1016/..
?
11
Dopant diffusion in SiGe: modeling stress and Ge chemical e..:
Pakfar, A
Materials Science and Engineering: B. 89 (2002) 1-3 - p. 225-228 , 2002
Link:
https://doi.org/10.1016/..
?
12
Expressions of pathologic markers in PRP based chondrogenic..:
Pakfar, Arezou
;
Irani, Shiva
;
Hanaee-Ahvaz, Hana
Tissue and Cell. 49 (2017) 1 - p. 122-130 , 2017
Link:
https://doi.org/10.1016/..
?
13
Using Intelligent Educational Technology in Computer Networ:
Beheshti, Mobina
;
Pakfar, Amir
Procedia - Social and Behavioral Sciences. 116 (2014) - p. 2994-2997 , 2014
Link:
https://doi.org/10.1016/..
?
14
Precipitation of Antimony Implanted into Silicon:
Koffel, Stephane
;
Pichler, Peter
;
Reading, Michael A.
...
ECS Transactions. 41 (2012) 34 - p. 9-17 , 2012
Link:
https://doi.org/10.1149/..
?
15
Continuum simulation of solid phase epitaxial regrowth of a..:
Delalleau, Julien
;
Pakfar, Ardechir
;
Bazizi, El-Medhi
..
physica status solidi (a). 208 (2010) 3 - p. 608-611 , 2010
Link:
https://doi.org/10.1002/..
1-15