E-LIB Suche - Ergebnisse für: Pan, C.B.

1

Antibody-directed coupling of endoglin and MMP-14 is a key ..:

Kumar, S ; Pan, C C ; Bloodworth, J C...
Oncogene. 33 (2013) 30 - p. 3970-3979 , 2013

Link: https://doi.org/10.1038/..

2

Molecular mechanisms of activation of endothelial nitric ox..:

Ching, L.-C. ; Kou, Y. R. ; Shyue, S.-K....
Cardiovascular Research. 91 (2011) 3 - p. 492-501 , 2011

Link: https://doi.org/10.1093/..

3

Si+ ion implanted MPS bulk GaN diodes:

Irokawa, Y. ; Kim, J. ; Ren, F....
Solid-State Electronics. 48 (2004) 5 - p. 827-830 , 2004

Link: https://doi.org/10.1016/..

4

AlGaN/GaN HEMT based liquid sensors:

Mehandru, R. ; Luo, B. ; Kang, B.S....
Solid-State Electronics. 48 (2004) 2 - p. 351-353 , 2004

Link: https://doi.org/10.1016/..

5

Reduction of Surface-Induced Current Collapse in AlGaN/GaN ..:

Irokawa, Y. ; Luo, B. ; Ren, F....
Electrochemical and Solid-State Letters. 7 (2004) 9 - p. G188 , 2004

Link: https://doi.org/10.1149/..

6

2.6 A, 0.69 MW cm−2 single-chip bulk GaN p-i-n rectifier:

Irokawa, Y. ; Luo, B. ; Kang, B.S....
Solid-State Electronics. 48 (2004) 2 - p. 359-361 , 2004

Link: https://doi.org/10.1016/..

7

MgO/p-GaN enhancement mode metal-oxide semiconductor field-..:

Irokawa, Y. ; Nakano, Y. ; Ishiko, M....
Applied Physics Letters. 84 (2004) 15 - p. 2919-2921 , 2004

Link: https://doi.org/10.1063/..

8

Electrical and luminescent properties and the spectra of de..:

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V....
Journal of Electronic Materials. 33 (2004) 3 - p. 241-247 , 2004

Link: https://doi.org/10.1007/..

9

Lateral schottky GaN rectifiers formed by Si+ ion implantat..:

Irokawa, Y. ; Kim, Jihyun ; Ren, F....
Journal of Electronic Materials. 33 (2004) 5 - p. 426-430 , 2004

Link: https://doi.org/10.1007/..

10

DC Characteristics of AlGaN/GaN Heterostructure Field-Effec..:

Irokawa, Y. ; Luo, B. ; Ren, F....
Electrochemical and Solid-State Letters. 7 (2004) 1 - p. G8 , 2004

Link: https://doi.org/10.1149/..

11

GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN..:

LaRoche, J.R. ; Luo, B. ; Ren, F....
Solid-State Electronics. 48 (2004) 1 - p. 193-196 , 2004

Link: https://doi.org/10.1016/..

12

Effect of external strain on the conductivity of AlGaN/GaN ..:

Kang, B. S. ; Kim, S. ; Kim, J....
Applied Physics Letters. 83 (2003) 23 - p. 4845-4847 , 2003

Link: https://doi.org/10.1063/..

13

Current–voltage and reverse recovery characteristics of bul..:

Irokawa, Y. ; Luo, B. ; Kim, Jihyun...
Applied Physics Letters. 83 (2003) 11 - p. 2271-2273 , 2003

Link: https://doi.org/10.1063/..

14

Activation kinetics of implanted Si+ in GaN and application..:

Irokawa, Y. ; Kim, Jihyun ; Ren, F....
Applied Physics Letters. 83 (2003) 24 - p. 4987-4989 , 2003

Link: https://doi.org/10.1063/..

15

Down-regulation of mRNA coding for cGIRK1 in cultured embry..:

Gadbut, A.P. ; Wu, L. ; Pan, C.C....
Life Sciences. 56 (1995) 11-12 - p. 1022 , 1995

Link: https://doi.org/10.1016/..