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Passenberg, W
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1

Optical and structural properties of self-organized InGaAsN..:

Volovik, B V ; Kovsh, A R ; Passenberg, W...
Semiconductor Science and Technology.  16 (2001)  3 - p. 186-190 , 2001
Link: https://doi.org/10.1088/..
 
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2

InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaA..:

Maleev, N.A. ; Krestnikov, I.L. ; Kovsh, A.R....
physica status solidi (b).  224 (2001)  3 - p. 803-806 , 2001
Link: https://doi.org/10.1002/..
 
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3

1300nm GaAs-based microcavity LED incorporating InAs/GaInAs..:

Maleev, N.A ; Sakharov, A.V ; Moeller, C...
Journal of Crystal Growth.  227-228 (2001)  - p. 1146-1150 , 2001
Link: https://doi.org/10.1016/..
 
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4

Long-wavelength emission in InGaAsN/GaAs heterostructures w..:

Volovik, B. V. ; Kovsh, A. R. ; Passenberg, W....
Technical Physics Letters.  26 (2000)  5 - p. 443-445 , 2000
Link: https://doi.org/10.1134/..
 
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5

Surface preparation for molecular beam epitaxy-regrowth on ..:

Passenberg, W. ; Schlaak, W.
Journal of Crystal Growth.  173 (1997)  3-4 - p. 266-270 , 1997
Link: https://doi.org/10.1016/..
 
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6

On the potential of δ-doping for AlInAs/GaInAs HEMTs grown ..:

Passenberg, W. ; Bach, H.-G. ; Böttcher, J..
Journal of Crystal Growth.  127 (1993)  1-4 - p. 716-719 , 1993
Link: https://doi.org/10.1016/..
 
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7

Diamagnetic shifts of subbands and the quantum Hall effect ..:

Nachtwei, G ; Heide, S ; Kunzel, H.
Journal of Physics: Condensed Matter.  5 (1993)  8 - p. 1091-1098 , 1993
Link: https://doi.org/10.1088/..
 
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8

Integrated wavelength demultiplexer-receiver on InP:

Bornholdt, C. ; Trommer, D. ; Unterbörsch, G....
Applied Physics Letters.  60 (1992)  8 - p. 971-973 , 1992
Link: https://doi.org/10.1063/..
 
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9

MBE growth and electrical behaviour of single and double Si..:

Passenberg, W. ; Bach, H. G. ; Böttcher, J.
Journal of Electronic Materials.  20 (1991)  12 - p. 989-991 , 1991
Link: https://doi.org/10.1007/..
 
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10

Optimization of the AlInAs growth temperature for AlInAs/Ga..:

Künzel, H. ; Passenberg, W. ; Böttcher, J..
Microelectronic Engineering.  15 (1991)  1-4 - p. 569-572 , 1991
Link: https://doi.org/10.1016/..
 
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11

Critical issues in the MBE growth of Ga0.47In0.53As for wav..:

Künzel, H. ; Kaiser, R. ; Passenberg, W...
Journal of Crystal Growth.  111 (1991)  1-4 - p. 1084-1088 , 1991
Link: https://doi.org/10.1016/..
 
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12

Incorporation behaviour of manganese in MBE grown Ga0.47In0..:

K�nzel, H. ; Bochnia, R. ; Gibis, R...
Applied Physics A Solids and Surfaces.  51 (1990)  6 - p. 508-514 , 1990
Link: https://doi.org/10.1007/..
 
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13

High performance InP ring resonator for new generation mono..:

CIMINELLI, Caterina ; DELL'OLIO, Francesco ; ARMENISE, Mario Nicola..
info:eu-repo/semantics/altIdentifier/wos/WOS:000315988100080.  , 2013
Link: http://hdl.handle.net/11..
 
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