E-LIB Suche - Ergebnisse für: Pearton, S. J.

1

Electronic properties of dopants and defects in widegap and..:

, In: Reference Module in Materials Science and Materials Engineering,

Pearton, S.J. , 2024

Link: https://doi.org/10.1016/..

2

Forward bias annealing of proton radiation damage in NiO/Ga..:

Li, Jian-Sian ; Chiang, Chao-Ching ; Wan, Hsiao-Hsuan...
Physica Scripta. 99 (2024) 7 - p. 075312 , 2024

Link: https://doi.org/10.1088/..

3

High-quality Cr2O3 - Ga2O3 solid solutions films grown by m..:

Nikolaev, V.I. ; Shapenkov, S.V. ; Timashov, R.B....
Journal of Alloys and Compounds. 994 (2024) - p. 174687 , 2024

Link: https://doi.org/10.1016/..

4

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 he..:

Polyakov, A. Y. ; Yakimov, E. B. ; Saranin, D. S....
Journal of Applied Physics. 135 (2024) 16 - p. , 2024

Link: https://doi.org/10.1063/..

5

Color center inβ-Ga2O3 emitting at the telecom range:

Stehr, J. E. ; Jansson, M. ; Pearton, S. J....
Applied Physics Letters. 124 (2024) 4 - p. , 2024

Link: https://doi.org/10.1063/..

6

Role of surface treatments and localized surface plasmon na..:

Lee, In-Hwan ; Cho, Yeong-Hoon ; Alexanyan, L.A....
Journal of Alloys and Compounds. 998 (2024) - p. 174921 , 2024

Link: https://doi.org/10.1016/..

7

The role of carbon capping and Ar pressure on SiC surface d..:

Kuebler, L. ; Hershkovitz, E. ; Kouzminov, D....
Applied Surface Science. 670 (2024) - p. 160654 , 2024

Link: https://doi.org/10.1016/..

8

Trap States and Carrier Diffusion in Czochralski (100) Sing..:

Nikolaev, V. I. ; Polyakov, A. Y. ; Krymov, V. M....
ECS Journal of Solid State Science and Technology. 13 (2024) 1 - p. 015003 , 2024

Link: https://doi.org/10.1149/..

9

Mechanism for Long Photocurrent Time Constants in α-Ga2O3 U..:

Polyakov, A. Y. ; Almaev, A. V. ; Nikolaev, V. I....
ECS Journal of Solid State Science and Technology. 12 (2023) 4 - p. 045002 , 2023

Link: https://doi.org/10.1149/..

10

Reversible total ionizing dose effects in NiO/Ga2O3 heteroj..:

Li, Jian-Sian ; Chiang, Chao-Ching ; Xia, Xinyi...
Journal of Applied Physics. 133 (2023) 1 - p. , 2023

Link: https://doi.org/10.1063/..

11

Conducting surface layers formed by hydrogenation of O-impl..:

Polyakov, A.Y. ; Vasilev, A.A. ; Shchemerov, I.V....
Journal of Alloys and Compounds. 945 (2023) - p. 169258 , 2023

Link: https://doi.org/10.1016/..

12

Reproducible and High-Temperature Performance of NiO/ $\bet..:

, In: 2023 Device Research Conference (DRC),

Li, Jian-Sian ; Chiang, Chao-Ching ; Xia, Xinyi... - p. 1-2 , 2023

Link: https://doi.org/10.1109/..

13

1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers:

Li, Jian-Sian ; Chiang, Chao-Ching ; Xia, Xinyi...
ECS Journal of Solid State Science and Technology. 12 (2023) 8 - p. 085001 , 2023

Link: https://doi.org/10.1149/..

14

HVPE Growth and Characterization of Thick κ-Ga2O3 layers on..:

Stepanov, S. I. ; Nikolaev, V. I. ; Polyakov, A. Y....
ECS Journal of Solid State Science and Technology. 12 (2023) 1 - p. 015002 , 2023

Link: https://doi.org/10.1149/..

15

Carrier removal rates in 1.1 MeV proton irradiated α-Ga2O3 ..:

Polyakov, A Y ; Nikolaev, V I ; Pechnikov, A I...
Journal of Physics D: Applied Physics. 56 (2023) 30 - p. 305103 , 2023

Link: https://doi.org/10.1088/..