E-LIB Suche - Ergebnisse für: Pei, Yicheng

1

Influence of Growth Process on Suppression of Surface Morph..:

Pei, Yicheng ; Yuan, Weilong ; Li, Yunkai...
Micromachines. 15 (2024) 6 - p. 665 , 2024

Link: https://doi.org/10.3390/..

2

Effect of TCS gas flow and pre-etching on homopitaxial grow..:

Guo, Ning ; Pei, Yicheng ; Yuan, Weilong...
RSC Advances. 14 (2024) 23 - p. 16574-16583 , 2024

Link: https://doi.org/10.1039/..

3

Research on the Influence of Carbon Sources and Buffer Laye..:

Yuan, Weilong ; Pei, Yicheng ; Li, Yunkai...
Micromachines. 15 (2024) 5 - p. 600 , 2024

Link: https://doi.org/10.3390/..

4

High Uniformity 6-Inch InGaP Epitaxial Growth:

Yang, Shangyu ; Guo, Ning ; Pei, Yicheng...
Crystals. 13 (2023) 8 - p. 1165 , 2023

Link: https://doi.org/10.3390/..

5

Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined ..:

Guo, Ning ; Pei, Yicheng ; Yuan, Weilong...
Crystals. 13 (2023) 7 - p. 1123 , 2023

Link: https://doi.org/10.3390/..

6

Application of Methyl Trichlorosilane in SiC Growth:

, In: 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),

Guo, Ning ; Pei, Yicheng ; Yuan, Weilong... - p. 6-9 , 2023

Link: https://doi.org/10.1109/..

7

The Optimizing Effect of Nitrogen Flow Ratio on the Homoepi..:

Yuan, Weilong ; Pei, Yicheng ; Guo, Ning...
Crystals. 13 (2023) 6 - p. 935 , 2023

Link: https://doi.org/10.3390/..

8

Selective removal of 4H-SiC porous structures caused by pho..:

Li, Yunkai ; Zhao, Siqi ; Yang, Shangyu...
Semiconductor Science and Technology. 38 (2023) 11 - p. 115001 , 2023

Link: https://doi.org/10.1088/..

9

Multiple-Layer Triangular Defects in 4H-SiC Homoepitaxial F..:

Pei, Yicheng ; Yuan, Weilong ; Guo, Ning...
Crystals. 13 (2023) 7 - p. 1056 , 2023

Link: https://doi.org/10.3390/..

10

Effects of Ta and Y additions on the high temperature oxida..:

Wang, Huicong ; Liu, Jingye ; Lei, Shengyuan...
Vacuum. 213 (2023) - p. 112074 , 2023

Link: https://doi.org/10.1016/..

11

Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined ..:

Ning Guo ; Yicheng Pei ; Weilong Yuan...
Materials for Energy Applications. , 2023

Link: https://doi.org/10.3390/..

12

The Optimizing Effect of Nitrogen Flow Ratio on the Homoepi..:

Weilong Yuan ; Yicheng Pei ; Ning Guo...
Materials for Energy Applications. , 2023

Link: https://doi.org/10.3390/..

13

High Uniformity 6-Inch InGaP Epitaxial Growth:

Shangyu Yang ; Ning Guo ; Yicheng Pei...
Materials for Energy Applications. , 2023

Link: https://doi.org/10.3390/..

14

High Uniformity 6-Inch InGaP Epitaxial Growth:

Shangyu Yang ; Ning Guo ; Yicheng Pei...
https://www.mdpi.com/2073-4352/13/8/1165. , 2023

Link: https://doi.org/10.3390/..

15

The Optimizing Effect of Nitrogen Flow Ratio on the Homoepi..:

Weilong Yuan ; Yicheng Pei ; Ning Guo...
https://www.mdpi.com/2073-4352/13/6/935. , 2023

Link: https://doi.org/10.3390/..