Pelissier, B.
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3

Study of physisorption phenomena of chemical species on 300..:

Pelissier, B. ; Labau, S. ; Martin, M....
Microelectronic Engineering.  231 (2020)  - p. 111401 , 2020
 
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Wet and Siconi® cleaning sequences for SiGe p-type metal ox..:

Raynal, P.E. ; Loup, V. ; Vallier, L....
Microelectronic Engineering.  187-188 (2018)  - p. 84-89 , 2018
 
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7

Benefits of XPS nanocharacterization for process developmen..:

Fauquier, L. ; Pelissier, B. ; Jalabert, D....
Materials Science in Semiconductor Processing.  70 (2017)  - p. 105-110 , 2017
 
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9

Control of carbon content in amorphous GeTe films deposited..:

Aoukar, M ; Szkutnik, P D ; Jourde, D...
Journal of Physics D: Applied Physics.  48 (2015)  26 - p. 265203 , 2015
 
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10

PECVD RF versus dual frequency: an investigation of plasma ..:

Piallat, F ; Vallée, C ; Gassilloud, R...
Journal of Physics D: Applied Physics.  47 (2014)  18 - p. 185201 , 2014
 
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12

Impact of Oxidation on Ge2Sb2Te5and GeTe Phase-Change Prope..:

Gourvest, E. ; Pelissier, B. ; Vallée, C....
Journal of The Electrochemical Society.  159 (2012)  4 - p. H373-H377 , 2012
 
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13

HF contamination of 200mm Al wafers: A parallel angle resol..:

Pelissier, B. ; Fontaine, H. ; Beaurain, A...
Microelectronic Engineering.  88 (2011)  6 - p. 861-866 , 2011
 
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15

Degradation and surfactant-aided regeneration of fluorinate..:

Zelsmann, M. ; Alleaume, C. ; Truffier-Boutry, D....
Microelectronic Engineering.  87 (2010)  5-8 - p. 1029-1032 , 2010
 
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