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Pelzel, Rodney I.
24
results:
Search for persons
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Online (24)
Mediatypes
Articles (Online) (21)
Bookchapter (Online) (3)
Sorted by: Relevance
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1
MOVPE and its future production challenges:
Davies, J. Iwan
;
Johnson, Andrew D.
;
Pelzel, Rodney I.
...
Journal of Crystal Growth. 605 (2023) - p. 127031 , 2023
Link:
https://doi.org/10.1016/..
?
2
Strain relaxation and interfacial stability in III–V semico..:
Maroudas, Dimitrios
;
Zepeda-Ruiz, Luis A.
;
Pelzel, Rodney I.
..
Computational Materials Science. 23 (2002) 1-4 - p. 250-259 , 2002
Link:
https://doi.org/10.1016/..
?
3
Deformation behavior of coherently strained InAs/GaAs(111)A..:
Zepeda-Ruiz, Luis A.
;
Pelzel, Rodney I.
;
Nosho, Brett Z.
..
Journal of Applied Physics. 90 (2001) 6 - p. 2689-2698 , 2001
Link:
https://doi.org/10.1063/..
?
4
Effects of buffer layer thickness and film compositional gr..:
Pelzel, Rodney I.
;
Zepeda-Ruiz, Luis A.
;
Weinberg, W.Henry
.
Surface Science. 463 (2000) 2 - p. L634-L640 , 2000
Link:
https://doi.org/10.1016/..
?
5
Interfacial stability and structure in InAs/GaAs(111)A hete..:
Zepeda-Ruiz, Luis A.
;
Pelzel, Rodney I.
;
Weinberg, W. Henry
.
Applied Physics Letters. 77 (2000) 21 - p. 3352-3354 , 2000
Link:
https://doi.org/10.1063/..
?
6
Mechanical behavior of thin buffer layers in InAs/GaAs(111)..:
Pelzel, Rodney I.
;
Zepeda-Ruiz, Luis A.
;
Nosho, Brett Z.
...
Applied Physics Letters. 76 (2000) 21 - p. 3017-3019 , 2000
Link:
https://doi.org/10.1063/..
?
7
Kinetics of strain relaxation through misfit dislocation fo..:
Zepeda-Ruiz, Luis A.
;
Nosho, Brett Z.
;
Pelzel, Rodney I.
..
Surface Science. 441 (1999) 2-3 - p. L911-L916 , 1999
Link:
https://doi.org/10.1016/..
?
8
Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experi..:
Nosho, Brett Z.
;
Zepeda-Ruiz, Luis A.
;
Pelzel, Rodney I.
..
Applied Physics Letters. 75 (1999) 6 - p. 829-831 , 1999
Link:
https://doi.org/10.1063/..
?
9
Strained-layer heteroepitaxy to fabricate self-assembled se..:
, In:
Nanostructured Materials and Nanotechnology
,
Weinberg, W.H.
;
Reaves, C.M.
;
Nosho, B.Z.
.. - p. 207-245 , 2002
Link:
https://doi.org/10.1016/..
?
10
Commercial production of QWIP wafers by molecular beam epit..:
Fastenau, J.M
;
Liu, W.K
;
Fang, X.M
...
Infrared Physics & Technology. 42 (2001) 3-5 - p. 407-415 , 2001
Link:
https://doi.org/10.1016/..
?
11
Adsorption of [(tBu)GaS]4 on the GaAs(001)-(4×2) surface:
Pelzel, R.I
;
Nosho, B.Z
;
Fimland, B.O
.
Surface Science. 470 (2000) 1-2 - p. L81-L87 , 2000
Link:
https://doi.org/10.1016/..
?
12
Growth of GaS on GaAs(100)-(4×2) with the single-source pre..:
Hopcus, A.B.
;
Yi, S.I.
;
Chung, C.-H.
..
Surface Science. 446 (2000) 1-2 - p. 55-62 , 2000
Link:
https://doi.org/10.1016/..
?
13
Effect of initial surface reconstruction on the GaS/GaAs(00..:
Pelzel, R. I.
;
Nosho, B. Z.
;
Shoenfeld, W. V.
...
Applied Physics Letters. 75 (1999) 21 - p. 3354-3356 , 1999
Link:
https://doi.org/10.1063/..
?
14
Adsorption of [(tBu)GaS]4 on GaAs(001)-(2×4):
Pelzel, R.I.
;
Nosho, B.Z.
;
Fimland, B.O.
.
Surface Science. 426 (1999) 2 - p. 163-172 , 1999
Link:
https://doi.org/10.1016/..
?
15
Formation of self-assembled InP islands on a GaInP/GaAs(311..:
Reaves, C. M.
;
Pelzel, R. I.
;
Hsueh, G. C.
..
Applied Physics Letters. 69 (1996) 25 - p. 3878-3880 , 1996
Link:
https://doi.org/10.1063/..
1-15