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Pensl, G
102  results:
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1

Anharmonic vibrations of the dicarbon antisite defect in 4H..:

Yan, F. ; Devaty, R. P. ; Choyke, W. J....
Applied Physics Letters.  100 (2012)  13 - p. , 2012
Link: https://doi.org/10.1063/..
 
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2

High electron mobility achieved in n‐channel 4H‐SiC MOSFETs..:

Zippelius, B. ; Beljakowa, S. ; Krieger, M....
physica status solidi (a).  206 (2009)  10 - p. 2363-2373 , 2009
Link: https://doi.org/10.1002/..
 
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3

Analysis of interface trap parameters from double‐peak cond..:

Krieger, M. ; Beljakowa, S. ; Trapaidze, L....
physica status solidi (b).  245 (2008)  7 - p. 1390-1395 , 2008
Link: https://doi.org/10.1002/..
 
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4

2MeV ion irradiation effects on AlGaN/GaN HFET devices:

Sonia, G. ; Richter, E. ; Brunner, F....
Solid-State Electronics.  52 (2008)  7 - p. 1011-1017 , 2008
Link: https://doi.org/10.1016/..
 
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5

Electronic properties and dopant pairing behavior of mangan..:

Roth, T. ; Rosenits, P. ; Diez, S....
Journal of Applied Physics.  102 (2007)  10 - p. , 2007
Link: https://doi.org/10.1063/..
 
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6

Growth of cubic SiC single crystals by the physical vapor t..:

Semmelroth, K. ; Krieger, M. ; Pensl, G....
Journal of Crystal Growth.  308 (2007)  2 - p. 241-246 , 2007
Link: https://doi.org/10.1016/..
 
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7

Effect of the Schottky barrier height on the detection of m..:

Reshanov, S. A. ; Pensl, G. ; Danno, K....
Journal of Applied Physics.  102 (2007)  11 - p. , 2007
Link: https://doi.org/10.1063/..
 
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8

Energetically deep defect centers in vapor-phase grown zinc..:

Frank, T. ; Pensl, G. ; Tena-Zaera, R....
Applied Physics A.  88 (2007)  1 - p. 141-145 , 2007
Link: https://doi.org/10.1007/..
 
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9

Properties of the oxygen vacancy in ZnO:

Hofmann, D.M. ; Pfisterer, D. ; Sann, J....
Applied Physics A.  88 (2007)  1 - p. 147-151 , 2007
Link: https://doi.org/10.1007/..
 
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10

Intrinsic and extrinsic point-defects in vapor transport gr..:

Pfisterer, D. ; Hofmann, D.M. ; Sann, J....
Physica B: Condensed Matter.  376-377 (2006)  - p. 767-770 , 2006
Link: https://doi.org/10.1016/..
 
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11

Deactivation of nitrogen donors in silicon carbide:

Schmid, F. ; Reshanov, S. A. ; Weber, H. B....
Physical Review B.  74 (2006)  24 - p. , 2006
Link: https://doi.org/10.1103/..
 
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12

Fabrication and Characterization of 3C‐SiC‐Based MOSFETs:

Schöner, A. ; Krieger, M. ; Pensl, G...
Chemical Vapor Deposition.  12 (2006)  8-9 - p. 523-530 , 2006
Link: https://doi.org/10.1002/..
 
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13

Defect-engineering in SiC by ion implantation and electron ..:

Pensl, G. ; Ciobanu, F. ; Frank, T....
Microelectronic Engineering.  83 (2006)  1 - p. 146-149 , 2006
Link: https://doi.org/10.1016/..
 
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14

Identification of sulfur double donors in 4H-, 6H-, and 3C-..:

Reshanov, S. A. ; Pensl, G. ; Nagasawa, H..
Journal of Applied Physics.  99 (2006)  12 - p. , 2006
Link: https://doi.org/10.1063/..
 
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15

Implantation and annealing of aluminum in 4H silicon carbid:

Rambach, M. ; Schmid, F. ; Krieger, M....
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  237 (2005)  1-2 - p. 68-71 , 2005
Link: https://doi.org/10.1016/..
 
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