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Pensl, Gerhard
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1

Persistent Conductivity in n-Type 3C-SiC Observed at Low Te..:

Beljakowa, Svetlana ; Hauck, Martin ; Bockstedte, Michel...
Materials Science Forum.  778-780 (2014)  - p. 265-268 , 2014
Link: https://doi.org/10.4028/..
 
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2

Determination of the Electrical Capture Process of the EH6-..:

Weber, Jonas ; Beljakowa, Svetlana ; Weber, Heiko B....
Materials Science Forum.  740-742 (2013)  - p. 377-380 , 2013
Link: https://doi.org/10.4028/..
 
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3

Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on t..:

Zippelius, Bernd ; Hauck, Martin ; Beljakowa, Svetlana...
Materials Science Forum.  717-720 (2012)  - p. 1113-1116 , 2012
Link: https://doi.org/10.4028/..
 
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4

Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?:

Zippelius, Bernd ; Glas, Alexander ; Weber, Heiko B....
Materials Science Forum.  717-720 (2012)  - p. 251-254 , 2012
Link: https://doi.org/10.4028/..
 
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5

Thermally-Assisted Tunneling Model for 3C-SiC p+-n Diodes:

Zippelius, Bernd ; Krieger, M. ; Weber, Heiko B....
Materials Science Forum.  679-680 (2011)  - p. 571-574 , 2011
Link: https://doi.org/10.4028/..
 
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6

Iron-Related Defect Centers in 4H-SiC Detected by Deep Leve..:

Trapaidze, Lia ; Hollweck, R. ; Beljakowa, Svetlana...
Materials Science Forum.  679-680 (2011)  - p. 257-260 , 2011
Link: https://doi.org/10.4028/..
 
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7

Iron-Related Defect Centers in 3C-SiC:

Tsirimpis, Thanos ; Beljakova, S. ; Zippelius, Bernd...
Materials Science Forum.  679-680 (2011)  - p. 265-268 , 2011
Link: https://doi.org/10.4028/..
 
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8

Effects of Thermal Oxidation on Deep Levels Generated by Io..:

Kawahara, Koutarou ; Alfieri, Giovanni ; Hiyoshi, Toru..
Materials Science Forum.  645-648 (2010)  - p. 651-654 , 2010
Link: https://doi.org/10.4028/..
 
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9

Reduction of deep levels generated by ion implantation into..:

Kawahara, Koutarou ; Suda, Jun ; Pensl, Gerhard.
Journal of Applied Physics.  108 (2010)  3 - p. , 2010
Link: https://doi.org/10.1063/..
 
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10

Temperature-Dependence of the Leakage Current of 3C-SiC p+-..:

Zippelius, Bernd ; Krieger, M. ; Weber, Heiko B....
Materials Science Forum.  645-648 (2010)  - p. 343-346 , 2010
Link: https://doi.org/10.4028/..
 
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11

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC:

Alfieri, Giovanni ; Kimoto, Tsunenobu ; Pensl, Gerhard
Materials Science Forum.  645-648 (2010)  - p. 455-458 , 2010
Link: https://doi.org/10.4028/..
 
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12

New Lines and Issues Associated with Deep Defect Spectra in..:

Yan, Fei ; Devaty, Robert P. ; Choyke, Wolfgang J....
Materials Science Forum.  645-648 (2010)  - p. 411-414 , 2010
Link: https://doi.org/10.4028/..
 
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13

Correlation between Leakage Current and Stacking Fault Dens..:

Kawahara, Takamitsu ; Hatta, Naoki ; Yagi, Kuniaki...
Materials Science Forum.  645-648 (2010)  - p. 339-342 , 2010
Link: https://doi.org/10.4028/..
 
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14

Thermal Histories of Defect Centers as Measured by Low Temp..:

Yan, Fei ; Devaty, Robert P. ; Choyke, Wolfgang J....
Materials Science Forum.  645-648 (2010)  - p. 419-422 , 2010
Link: https://doi.org/10.4028/..
 
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15

Preannealing Effect on Mobility of N-/Al-Coimplanted and Ov..:

Nanen, Yuichiro ; Zippelius, Bernd ; Beljakowa, Svetlana...
Materials Science Forum.  645-648 (2010)  - p. 487-490 , 2010
Link: https://doi.org/10.4028/..
 
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