E-LIB Suche - Ergebnisse für: Piluso, N.

1

Advanced strategies for high activation in ion implanted 4H..:

, In: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE),

Calabretta, C. ; Pecora, A. ; Agati, M.... - p. 1-5 , 2024

Link: https://doi.org/10.1109/..

2

Micro-Raman evaluation of 200 mm SiC material:

Piluso, N. ; Carria, E. ; Anzalone, R..
Microelectronic Engineering. 273 (2023) - p. 111962 , 2023

Link: https://doi.org/10.1016/..

3

Carbonization and transition layer effects on 3C-SiC film r..:

Anzalone, R. ; Litrico, G. ; Piluso, N....
Journal of Crystal Growth. 473 (2017) - p. 11-19 , 2017

Link: https://doi.org/10.1016/..

4

4H-SiC defects evolution by thermal processes:

, In: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM),

Piluso, N. ; Di Stefano, M. A. ; Lorenti, S.. - p. 1-1 , 2016

Link: https://doi.org/10.4028/..

5

Optimization of Ion Implantation processes for 4H-SiC DIMOS..:

Piluso, N. ; Fontana, E. ; Di Stefano, M. A....
MRS Advances. 1 (2016) 55 - p. 3673-3678 , 2016

Link: https://doi.org/10.1557/..

6

Photocatalytical activity of amorphous hydrogenated TiO2 ob..:

Zimbone, M. ; Cacciato, G. ; Buccheri, M.A....
Materials Science in Semiconductor Processing. 42 (2016) - p. 28-31 , 2016

Link: https://doi.org/10.1016/..

7

Hydrogen etching influence on 4H-SiC homo-epitaxial layer f..:

, In: 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM),

Anzalone, R. ; Piluso, N. ; Salanitri, M.... - p. 1-1 , 2016

Link: https://doi.org/10.4028/..

8

A novel micro-Raman technique to detect and characterize 4H..:

Piluso, N. ; Camarda, M. ; La Via, F.
Journal of Applied Physics. 116 (2014) 16 - p. , 2014

Link: https://doi.org/10.1063/..

9

Enhanced light scattering in Si nanostructures produced by ..:

Sberna, P. M. ; Scapellato, G. G. ; Piluso, N....
Applied Physics Letters. 103 (2013) 22 - p. , 2013

Link: https://doi.org/10.1063/..

10

Morphology and distribution of carbon nanostructures in a d..:

Scalese, S. ; Scuderi, V. ; Bagiante, S....
Physica E: Low-dimensional Systems and Nanostructures. 44 (2012) 6 - p. 1005-1008 , 2012

Link: https://doi.org/10.1016/..

11

Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC..:

Piluso, N. ; Anzalone, R. ; Camarda, M....
Journal of Raman Spectroscopy. 44 (2012) 2 - p. 299-306 , 2012

Link: https://doi.org/10.1002/..

12

Matrix role in Ge nanoclusters embedded in Si3N4 or SiO2:

Mirabella, S. ; Cosentino, S. ; Gentile, A....
Applied Physics Letters. 101 (2012) 1 - p. , 2012

Link: https://doi.org/10.1063/..

13

Large area optical characterization of 3 and 4 inches 4H–Si..:

Canino, A. ; Piluso, N. ; La Via, F.
Thin Solid Films. 522 (2012) - p. 30-32 , 2012

Link: https://doi.org/10.1016/..

14

Stress Evaluation on Hetero-Epitaxial 3C-SiC Film on (100) ..:

Anzalone, Ruggero ; Camarda, M. ; Locke, C....
Materials Science Forum. 717-720 (2012) - p. 521-524 , 2012

Link: https://doi.org/10.4028/..

15

Wafer Cut Effect on Hetero-Epitaxial 3C-SiC Film for MEMS A..:

Anzalone, R. ; Camarda, M. ; Auditore, A....
Electrochemical and Solid-State Letters. 15 (2012) 6 - p. H182 , 2012

Link: https://doi.org/10.1149/..