E-LIB Suche - Ergebnisse für: Piotrowicz, Stéphane

1

InAlGaN-based HEMT with very low Ohmic contact resistance r..:

Pitaval, Charles ; Aroulanda, Sébastien ; Fouzi, Yassine...
Applied Physics Letters. 125 (2024) 1 - p. , 2024

Link: https://doi.org/10.1063/..

2

Polymer Coatings for Better Robustness of GaN-based RF Circ..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Bellomonte, Giuseppe ; Atawa, Bienvenu ; Serghei, Anatoli... - p. 1-5 , 2022

Link: https://doi.org/10.1109/..

3

In‐depth analysis of InAlN/GaN HEMT heterostructure after a..:

Bourlier, Yoan ; Bouttemy, Muriel ; Fregnaux, Mathieu...
Surface and Interface Analysis. 52 (2020) 12 - p. 914-918 , 2020

Link: https://doi.org/10.1002/..

4

InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC ..:

Piotrowicz, Stéphane ; Jacquet, Jean-Claude ; Gamarra, Piero...
International Journal of Microwave and Wireless Technologies. 10 (2017) 1 - p. 39-46 , 2017

Link: https://doi.org/10.1017/..

5

Highlighting trapping phenomena in microwave GaN HEMTs by l..:

Potier, Clément ; Jacquet, Jean-Claude ; Dua, Christian...
International Journal of Microwave and Wireless Technologies. 7 (2015) 3-4 - p. 287-296 , 2015

Link: https://doi.org/10.1017/..

6

InAlN/GaN HEMTs based L-band high-power packaged amplifiers:

Jardel, Olivier ; Jacquet, Jean-Claude ; Baczkowski, Lény...
International Journal of Microwave and Wireless Technologies. 6 (2014) 6 - p. 565-572 , 2014

Link: https://doi.org/10.1017/..

7

A new GaN-based high-speed and high-power switching circuit..:

Augeau, Patrick ; Bouysse, Philippe ; Martin, Audrey...
International Journal of Microwave and Wireless Technologies. 6 (2013) 1 - p. 13-21 , 2013

Link: https://doi.org/10.1017/..

8

Electrical performances of AlInN/GaN HEMTs. A comparison wi..:

Jardel, Olivier ; Callet, Guillaume ; Dufraisse, Jérémy...
International Journal of Microwave and Wireless Technologies. 3 (2011) 3 - p. 301-309 , 2011

Link: https://doi.org/10.1017/..

9

A new nonlinear HEMT model for AlGaN/GaN switch application:

Callet, Guillaume ; Faraj, Jad ; Jardel, Olivier...
International Journal of Microwave and Wireless Technologies. 2 (2010) 3-4 - p. 283-291 , 2010

Link: https://doi.org/10.1017/..

10

Overview of AlGaN/GaN HEMT technology for L- to Ku-band app..:

Piotrowicz, Stéphane ; Morvan, Erwan ; Aubry, Raphaël...
International Journal of Microwave and Wireless Technologies. 2 (2010) 1 - p. 105-114 , 2010

Link: https://doi.org/10.1017/..

11

Modélisation Large Bande de la Dispersion Fréquentielle de ..:

Nsele, Séraphin Dieudonné ; Escotte, Laurent ; Tartarin, Jean-Guy..
hal-00860965. , 2013

Link: https://hal.science/hal-..

12

Noise characteristics of AlInN/GaN HEMTs at microwave frequ..:

Nsele, Séraphin Dieudonné ; Escotte, Laurent ; Tartarin, Jean-Guy.
hal-00859789. , 2013

Link: https://hal.science/hal-..

13

Broadband Frequency Dispersion Small Signal Modeling of the..:

Nsele, Séraphin Dieudonné ; Escotte, Laurent ; Tartarin, Jean-Guy..
hal-00859123. , 2013

Link: https://hal.archives-ouv..

14

Noise characteristics of AlInN/GaN HEMTs at microwave frequ..:

Nsele, Séraphin Dieudonné ; Escotte, Laurent ; Tartarin, Jean-Guy.
hal-00859789. , 2013

Link: https://hal.science/hal-..

15

Broadband Frequency Dispersion Small Signal Modeling of the..:

Nsele, Séraphin Dieudonné ; Escotte, Laurent ; Tartarin, Jean-Guy..
hal-00859123. , 2013

Link: https://hal.science/hal-..