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Piotrzkowski, R.
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1

Physica status solidi 

Volume 124, Number 1: July 1  Physica status solidi ; Volume 124, Number 1, B
Acharya, C. K ; Agresti, A ; Aksenov, V. L... - Reprint 2021 . , [2021]
Link: https://doi.org/10.1515/..
 
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2

Self-compensation of carbon in HVPE-GaN:C:

Piotrzkowski, R. ; Zajac, M. ; Litwin-Staszewska, E..
Applied Physics Letters.  117 (2020)  1 - p. , 2020
Link: https://doi.org/10.1063/..
 
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3

High temperature electrical transport properties of MBE-gro..:

Konczewicz, L. ; Juillaguet, S. ; Litwin-Staszewska, E....
Journal of Applied Physics.  128 (2020)  8 - p. , 2020
Link: https://doi.org/10.1063/..
 
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4

Doping in bulk HVPE-GaN grown on native seeds – highly cond..:

Bockowski, M. ; Iwinska, M. ; Amilusik, M....
Journal of Crystal Growth.  499 (2018)  - p. 1-7 , 2018
Link: https://doi.org/10.1016/..
 
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5

Basic ammonothermal growth of Gallium Nitride – State of th..:

Zajac, M. ; Kucharski, R. ; Grabianska, K....
Progress in Crystal Growth and Characterization of Materials.  64 (2018)  3 - p. 63-74 , 2018
Link: https://doi.org/10.1016/..
 
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6

Crystallization of semi-insulating HVPE-GaN with solid iron..:

Iwinska, M. ; Piotrzkowski, R. ; Litwin-Staszewska, E....
Journal of Crystal Growth.  475 (2017)  - p. 121-126 , 2017
Link: https://doi.org/10.1016/..
 
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7

Crystal growth of HVPE-GaN doped with germanium:

Iwinska, M. ; Takekawa, N. ; Ivanov, V.Yu....
Journal of Crystal Growth.  480 (2017)  - p. 102-107 , 2017
Link: https://doi.org/10.1016/..
 
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8

(Invited) Growth and Characterization of Bulk HVPE-GaN – Pa..:

Bockowski, Michal ; Iwinska, M ; Amilusik, M...
ECS Transactions.  80 (2017)  10 - p. 991-1003 , 2017
Link: https://doi.org/10.1149/..
 
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9

Towards proper characterization of nonlinear metal-semicond..:

Piotrzkowski, R. ; Litwin-Staszewska, E. ; Grzanka, Sz.
Applied Physics Letters.  99 (2011)  5 - p. , 2011
Link: https://doi.org/10.1063/..
 
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10

Hole carrier concentration and photoluminescence in magnesi..:

Suski, T. ; Staszczak, G. ; Grzanka, S....
Journal of Applied Physics.  108 (2010)  2 - p. , 2010
Link: https://doi.org/10.1063/..
 
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11

Parallel conduction in p-type gallium nitride homo-structur..:

Litwin-Staszewska, E ; Konczewicz, L ; Piotrzkowski, R...
Semiconductor Science and Technology.  23 (2008)  9 - p. 095007 , 2008
Link: https://doi.org/10.1088/..
 
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12

Substrate misorientation induced strong increase in the hol..:

Suski, T. ; Litwin-Staszewska, E. ; Piotrzkowski, R....
Applied Physics Letters.  93 (2008)  17 - p. , 2008
Link: https://doi.org/10.1063/..
 
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13

Kinetics of low-temperature activation of acceptors in magn..:

Litwin-Staszewska, E. ; Piotrzkowski, R. ; Dmowski, L....
Journal of Applied Physics.  99 (2006)  3 - p. , 2006
Link: https://doi.org/10.1063/..
 
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14

Properties of InGaN blue laser diodes grown on bulk GaN sub..:

Perlin, P. ; Suski, T. ; Leszczyński, M....
Journal of Crystal Growth.  281 (2005)  1 - p. 107-114 , 2005
Link: https://doi.org/10.1016/..
 
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15

Optical and electrical properties of homoepitaxially grown ..:

Franssen, G. ; Litwin-Staszewska, E. ; Piotrzkowski, R...
Journal of Applied Physics.  94 (2003)  9 - p. 6122-6128 , 2003
Link: https://doi.org/10.1063/..
 
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