E-LIB Suche - Ergebnisse für: Pirouz, P.

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Physica status solidi

Volume 82, Number 2: April 16 Physica status solidi ; Volume 82, Number 2, A

Alario-Franco, M. A ; Anstis, G. R ; Atzkodt, V... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Brittle-to-ductile transition temperature in InP:

Bayu-Aji, Leonardus B. ; Pirouz, P.
physica status solidi (a). 207 (2009) 5 - p. 1190-1195 , 2009

Link: https://doi.org/10.1002/..

3

Some Aspects of the Structural, Mechanical and Electronic P..:

, In: NATO Science for Peace and Security Series B: Physics and Biophysics; Materials Issues for Generation IV Systems,

Pirouz, P. - p. 327-350 , 2008

Link: https://doi.org/10.1007/..

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Synthesis and characterization of ZnGeN2 grown from element..:

Du, K. ; Bekele, C. ; Hayman, C.C....
Journal of Crystal Growth. 310 (2008) 6 - p. 1057-1061 , 2008

Link: https://doi.org/10.1016/..

5

Absence of Dislocation Motion in 3C-SiC pn Diodes under For..:

Speer, Kevin M. ; Spry, David J. ; Trunek, Andrew J....
Materials Science Forum. 556-557 (2007) - p. 223-226 , 2007

Link: https://doi.org/10.4028/..

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Characteristics of Dislocation Half-Loop Arrays in 4H-SiC H..:

Zhang, Z. ; Stahlbush, R.E. ; Pirouz, P..
Journal of Electronic Materials. 36 (2007) 5 - p. 539-542 , 2007

Link: https://doi.org/10.1007/..

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Possible formation mechanisms for surface defects observed ..:

Speer, K. M. ; Neudeck, P. G. ; Crimp, M. A...
physica status solidi (a). 204 (2007) 7 - p. 2216-2221 , 2007

Link: https://doi.org/10.1002/..

8

Open Core Dislocations and Surface Energy of SiC:

Maximenko, S.I. ; Pirouz, P. ; Sudarshan, Tangali S.
Materials Science Forum. 527-529 (2006) - p. 439-442 , 2006

Link: https://doi.org/10.4028/..

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Recombination Behaviour of Stacking Faults in SiC p-i-n Dio..:

Maximenko, S.I. ; Pirouz, P. ; Sudarshan, Tangali S.
Materials Science Forum. 527-529 (2006) - p. 367-370 , 2006

Link: https://doi.org/10.4028/..

10

Investigation of Structural Stability in 4H-SiC Structures ..:

Galeckas, Augustinas ; Hallén, Anders ; Schöner, Adolf..
Materials Science Forum. 527-529 (2006) - p. 395-398 , 2006

Link: https://doi.org/10.4028/..

11

Light emission from silicon nanocrystals: Probing a single ..:

Sychugov, I. ; Juhasz, R. ; Valenta, J....
Applied Surface Science. 252 (2006) 15 - p. 5249-5253 , 2006

Link: https://doi.org/10.1016/..

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Recombination-Induced Stacking Faults: Evidence for a Gener..:

Galeckas, A. ; Linnros, J. ; Pirouz, P.
Physical Review Letters. 96 (2006) 2 - p. , 2006

Link: https://doi.org/10.1103/..

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Nitrogen doping and multiplicity of stacking faults in SiC:

Pirouz, P. ; Zhang, M. ; Hobgood, H. McD....
Philosophical Magazine. 86 (2006) 29-31 - p. 4685-4697 , 2006

Link: https://doi.org/10.1080/..

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Combined photoluminescence-imaging and deep-level transient..:

Galeckas, A. ; Hallén, A. ; Majdi, S...
Physical Review B. 74 (2006) 23 - p. , 2006

Link: https://doi.org/10.1103/..

15

Liquid-phase deposition of single-phase alpha-copper-indium..:

Cowen, J. ; Lucas, L. ; Ernst, F....
Materials Science and Engineering: B. 116 (2005) 3 - p. 311-319 , 2005

Link: https://doi.org/10.1016/..