E-LIB Suche - Ergebnisse für: Planson, Dominique

1

Electrical characteristics and trap signatures for Schottky..:

Kumari, Shikha ; Singh, Rashmi ; Kumar, Shivam...
Semiconductor Science and Technology. , 2024

2

Advanced characterization of SiC devices by optical beam in..:

Planson, Dominique ; Tournier, Dominique ; Sonneville, Camille...
Materials Science in Semiconductor Processing. 178 (2024) - p. 108444 , 2024

Link: https://doi.org/10.1016/..

3

Micro-Raman Spectroscopy Study of Vertical GaN Schottky Dio..:

N'Dohi, Atse Julien Eric ; Sonneville, Camille ; Saidi, Soufiane...
Crystals. 13 (2023) 5 - p. 713 , 2023

Link: https://doi.org/10.3390/..

4

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters f..:

, In: 2023 30th International Conference on Mixed Design of Integrated Circuits and System (MIXDES),

Makhoul, Ralph ; Bourennane, Abdelhakim ; Phung, Luong Viet... - p. 201-206 , 2023

Link: https://doi.org/10.23919..

5

Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for..:

, In: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe),

Makhoul, Ralph ; Beydoun, Nour ; Bourennane, Abdelhakim... - p. 1-9 , 2023

Link: https://doi.org/10.23919..

6

Electrically active traps in 4H-silicon carbide (4H-SiC) Pi..:

Raja, P. Vigneshwara ; Raynaud, Christophe ; Asllani, Besar..
Journal of Materials Science: Materials in Electronics. 34 (2023) 17 - p. , 2023

Link: https://doi.org/10.1007/..

7

First results on 1.2 kV SiC MOSFET body diode robustness te..:

Hamad, Hassan ; Tournier, Dominique ; Reynes, Jean-Michel...
Microelectronics Reliability. 151 (2023) - p. 115264 , 2023

Link: https://doi.org/10.1016/..

8

Electrical Behavior of Vertical Pt/Au Schottky Diodes on Ga..:

Dagher, Maroun ; Sonneville, Camille ; Brémond, Georges...
physica status solidi (a). 220 (2023) 16 - p. , 2023

Link: https://doi.org/10.1002/..

9

Emerging trends in OBIC characterization technique for Wide..:

, In: 2023 International Semiconductor Conference (CAS),

Planson, Dominique ; Sonneville, Camille ; Bevilacqua, Pascal. - p. 3-10 , 2023

Link: https://doi.org/10.1109/..

10

Threshold Voltage Measurement Protocol "Triple Sense" Appli..:

Grossl Bade, Tamiris ; Hamad, Hassan ; Lambert, Adrien..
Electronics. 12 (2023) 11 - p. 2529 , 2023

Link: https://doi.org/10.3390/..

11

Application of the Double Source Switching Test to GaN HEMT:

, In: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe),

Bade, Tamiris Grossl ; Alam, Maroun ; Morel, Herve. - p. 1-7 , 2023

Link: https://doi.org/10.23919..

12

Deep Level Transient Fourier Spectroscopy Investigation of ..:

Rigaud-Minet, Florian ; Raynaud, Christophe ; Buckley, Julien...
Energies. 16 (2023) 2 - p. 599 , 2023

Link: https://doi.org/10.3390/..

13

4H-SiC PiN Diode Protected by Narrow Field Rings Investigat..:

Planson, Dominique ; Sonneville, Camille ; Bevilacqua, Pascal...
Materials Science Forum. 1062 (2022) - p. 341-345 , 2022

Link: https://doi.org/10.4028/..

14

Silicon Carbide and Related Materials 2021: selected peer-r..

Materials science forum, volume 1062

Michaud, Jean François ; Phung, Luong Viêt ; Alquier, Daniel. , 2022

Link: https://search.ebscohost..

15

Enhanced Resonant Raman Scattering of GaN Functional Layers..:

Muravitskaya, Alina ; Rumyantseva, Anna ; Ndohi, Atse Julien Eric...
Materials Science Forum. 1062 (2022) - p. 293-297 , 2022

Link: https://doi.org/10.4028/..