E-LIB Suche - Ergebnisse für: Pohl, U. W.

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Physica status solidi

Volume 125, Number 2: October 1 Physica status solidi ; Volume 125, Number 2, B

Abe, Y ; Alexopoulos, K ; Ambrazevicius, G... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Physica status solidi

Volume 128, Number 2: April 1 Physica status solidi ; Volume 128, Number 2, B

Abdinbekov, S. S ; Abdullaev, A. G ; Aksenov, V. L... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Stressor-Induced Site Control of Quantum Dots for Single-Ph..:

, In: Semiconductor Nanophotonics; Springer Series in Solid-State Sciences,

Pohl, U. W. ; Strittmatter, A. ; Schliwa, A.... - p. 53-90 , 2020

Link: https://doi.org/10.1007/..

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Submonolayer Quantum Dots:

, In: Semiconductor Nanophotonics; Springer Series in Solid-State Sciences,

Owschimikow, N. ; Herzog, B. ; Lingnau, B.... - p. 13-51 , 2020

Link: https://doi.org/10.1007/..

5

Strain field of a buried oxide aperture:

Kießling, F. ; Niermann, T. ; Lehmann, M....
Physical Review B. 91 (2015) 7 - p. , 2015

Link: https://doi.org/10.1103/..

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Strong charge-carrier localization in InAs/GaAs submonolaye..:

Quandt, D. ; Schulze, J.-H. ; Schliwa, A....
Physical Review B. 91 (2015) 23 - p. , 2015

Link: https://doi.org/10.1103/..

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Growth of In0.25Ga0.75As quantum dots on GaP utilizing a Ga..:

Stracke, G. ; Glacki, A. ; Nowozin, T....
Applied Physics Letters. 101 (2012) 22 - p. , 2012

Link: https://doi.org/10.1063/..

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Lateral positioning of InGaAs quantum dots using a buried s..:

Strittmatter, A. ; Schliwa, A. ; Schulze, J.-H....
Applied Physics Letters. 100 (2012) 9 - p. , 2012

Link: https://doi.org/10.1063/..

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Electrically driven single photon source based on a site-co..:

Unrau, W. ; Quandt, D. ; Schulze, J.-H....
Applied Physics Letters. 101 (2012) 21 - p. , 2012

Link: https://doi.org/10.1063/..

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Atomic structure of closely stacked InAs submonolayer depos..:

Niermann, T. ; Kießling, F. ; Lehmann, M....
Journal of Applied Physics. 112 (2012) 8 - p. , 2012

Link: https://doi.org/10.1063/..

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Improved threshold of buried heterostructure InAs/GaInAsP q..:

Franke, D. ; Moehrle, M. ; Sigmund, A....
Journal of Applied Physics. 109 (2011) 8 - p. , 2011

Link: https://doi.org/10.1063/..

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Formation of InAs/InGaAsP quantum-dashes on InP(001):

Lenz, A. ; Genz, F. ; Eisele, H....
Applied Physics Letters. 95 (2009) 20 - p. , 2009

Link: https://doi.org/10.1063/..

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Limits of In(Ga)As/GaAs quantum dot growth:

Lenz, A. ; Eisele, H. ; Timm, R....
physica status solidi (b). 246 (2009) 4 - p. 717-720 , 2009

Link: https://doi.org/10.1002/..

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Suppression of the wavelength blue shift during overgrowth ..:

Strittmatter, A. ; Germann, T.D. ; Kettler, Th....
Journal of Crystal Growth. 310 (2008) 23 - p. 5066-5068 , 2008

Link: https://doi.org/10.1016/..

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Temperature-stable operation of a quantum dot semiconductor..:

Germann, T. D. ; Strittmatter, A. ; Pohl, J....
Applied Physics Letters. 93 (2008) 5 - p. , 2008

Link: https://doi.org/10.1063/..