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Polyarnyi, V.O.
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1

Epitaxial growth of silicon on silicon implanted with iron ..:

Galkin, G. G. ; Goroshko, D. L. ; Chusovitin, E. A....
Technical Physics.  53 (2008)  2 - p. 224-230 , 2008
Link: https://doi.org/10.1134/..
 
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2

Silicon layers atop iron silicide nanoislands on Si(100) su..:

Galkin, N.G. ; Goroshko, D.L. ; Polyarnyi, V.O....
Thin Solid Films.  515 (2007)  20-21 - p. 7805-7812 , 2007
Link: https://doi.org/10.1016/..
 
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3

Formation, crystal structure, and properties of silicon wit..:

Galkin, N. G. ; Goroshko, D. L. ; Polyarnyĭ, V. O....
Semiconductors.  41 (2007)  9 - p. 1067-1073 , 2007
Link: https://doi.org/10.1134/..
 
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4

Deep levels in silicon Schottky junctions with embedded arr..:

Tsormpatzoglou, A. ; Tassis, D. H. ; Dimitriadis, C. A....
Journal of Applied Physics.  100 (2006)  7 - p. , 2006
Link: https://doi.org/10.1063/..
 
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5

Formation and transport properties of Si(111)/.BETA.-FeSi2/..:

Galkin, N. G. ; Goroshko, D. L. ; Gouralnik, A. S....
e-Journal of Surface Science and Nanotechnology.  3 (2005)  - p. 97-106 , 2005
Link: https://doi.org/10.1380/..
 
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6

Self-organization of β-FeSi2 islands on Si(111)7×7:

Galkin, N.G. ; Polyarnyi, V.O. ; Gouralnik, A.S.
Thin Solid Films.  464-465 (2004)  - p. 199-203 , 2004
Link: https://doi.org/10.1016/..
 
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