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Posseme, C.
18  results:
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1

Succès des inhibiteurs de JAK dans une nouvelle présentatio..:

Fayand, A. ; Hentgen, V. ; Posseme, C....
La Revue de Médecine Interne.  44 (2023)  - p. A71-A72 , 2023
Link: https://doi.org/10.1016/..
 
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2

Le syndrome VEXAS se caractérise par une activation des voi..:

Terrier, B. ; Posseme, C. ; Temple, M....
La Revue de Médecine Interne.  43 (2022)  - p. A384 , 2022
Link: https://doi.org/10.1016/..
 
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3

Differential levels of IFNα subtypes in autoimmunity and vi..:

Bondet, V ; Rodero, MP ; Posseme, C...
https://discovery.ucl.ac.uk/id/eprint/10128520/1/Mauri_Differential%20levels%20of%20IFN%CE%B1%20subtypes%20in%20autoimmunity%20and%20viral%20infection_AOP.pdf.  , 2021
Link: https://discovery.ucl.ac..
 
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4

Distinctive roles of age, sex, and genetics in shaping tran..:

Piasecka, B ; Duffy, D ; Urrutia, A...
info:eu-repo/semantics/altIdentifier/doi/10.1073/pnas.1714765115.  , 2018
Link: https://serval.unil.ch/n..
 
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5

In situ Post Etch Treatment on Ge-rich GST after etching in..:

, In: 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM),
Boixaderas, C. ; Canvel, Y. ; Fontaine, B.... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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6

Bevel contamination management in 3D integration by localiz..:

Boulard, F. ; Gros, V. ; Porzier, C....
Microelectronic Engineering.  265 (2022)  - p. 111875 , 2022
Link: https://doi.org/10.1016/..
 
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7

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits ..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Le Royer, C. ; Mohamad, B. ; Biscarrat, J.... - p. 49-52 , 2022
Link: https://doi.org/10.1109/..
 
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8

Topographically selective deposition:

Chaker, A. ; Vallee, C. ; Pesce, V....
Applied Physics Letters.  114 (2019)  4 - p. , 2019
Link: https://doi.org/10.1063/..
 
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9

Roughening of porous SiCOH materials in fluorocarbon plasma:

Bailly, F. ; David, T. ; Chevolleau, T....
Journal of Applied Physics.  108 (2010)  1 - p. , 2010
Link: https://doi.org/10.1063/..
 
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10

Efficiency of reducing and oxidizing ash plasmas in prevent..:

Posseme, N. ; Chevolleau, T. ; David, T....
Microelectronic Engineering.  85 (2008)  8 - p. 1842-1849 , 2008
Link: https://doi.org/10.1016/..
 
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11

Impact of patterning and ashing on electrical properties an..:

Aimadeddine, M. ; Arnal, V. ; Farcy, A....
Microelectronic Engineering.  82 (2005)  3-4 - p. 341-347 , 2005
Link: https://doi.org/10.1016/..
 
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12

Vertically Stacked-NanoWires MOSFETs in a Replacement Metal..:

Barraud, S ; Lapras, V ; Samson, M...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441.  , 2016
Link: https://hal-cea.archives..
 
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13

Vertically Stacked-NanoWires MOSFETs in a Replacement Metal..:

Barraud, S ; Lapras, V ; Samson, M...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441.  , 2016
Link: https://hal-cea.archives..
 
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14

Vertically Stacked-NanoWires MOSFETs in a Replacement Metal..:

Barraud, S ; Lapras, V ; Samson, M...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441.  , 2016
Link: https://hal-cea.archives..
 
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15

Vertically Stacked-NanoWires MOSFETs in a Replacement Metal..:

Barraud, S ; Lapras, V ; Samson, M...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441.  , 2016
Link: https://hal-cea.archives..
 
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