Pott, V.
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1

High density vertical silicon NEM switches with CMOS-compat..:

Ng, E.J. ; Myint, T. ; Shen, N....
Electronics Letters.  47 (2011)  13 - p. 759-760 , 2011
 
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2

Punch-through impact ionization MOSFET (PIMOS): From device..:

Moselund, K.E. ; Bouvet, D. ; Pott, V....
Solid-State Electronics.  52 (2008)  9 - p. 1336-1344 , 2008
 
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3

Polyimide sacrificial layer for SOI SG-MOSFET pressure sens..:

Fernández-Bolaños, M. ; Abelé, N. ; Pott, V....
Microelectronic Engineering.  83 (2006)  4-9 - p. 1185-1188 , 2006
 
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4

A new logic family based on hybrid MOSFET-polysilicon nanow..:

, In: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.,
Ecoffey, S. ; Mazza, M. ; Pott, V.... - p. 269-272 , 2005
 
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5

A hybrid CMOS–SET co-fabrication platform using nano-grain ..:

Ecoffey, S. ; Pott, V. ; Mahapatra, S....
Microelectronic Engineering.  78-79 (2005)  - p. 239-243 , 2005
 
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8

LOW TEMPERATURE INVESTIGATION OF ELECTRICAL CONDUCTION IN P..:

Ecoffey, S ; Mahapatra, S ; Pott, V...
info:eu-repo/semantics/altIdentifier/arxiv/0708.1844.  , 2005
 
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9

LOW TEMPERATURE INVESTIGATION OF ELECTRICAL CONDUCTION IN P..:

Ecoffey, S ; Mahapatra, S ; Pott, V...
info:eu-repo/semantics/altIdentifier/arxiv/0708.1844.  , 2005
 
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10

Eichhornia meyeri A. G. Schultz : a new citation for the Pa..:

Da Luz Sanches, A ; Cervi, A. C ; Pott, V. J
https://collectaneabotanica.revistas.csic.es/index.php/collectaneabotanica/article/view/19/19.  , 2003
 
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11

Eichhornia meyeri A. G. Schultz: una nueva cita para el Pan..:

A. Da Luz Sanches ; A. C. Cervi ; V. J. Pott
http://collectaneabotanica.revistas.csic.es/index.php/collectaneabotanica/article/view/19.  , 2003
 
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12

Gift im Holz mit Extrateil Formaldehyd 

Bremer Reihe Umwelt & Arbeit
Pott, Fromut - 6. Aufl . , 1994
 
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13

The first spectroscopic IR reverberation programme on Mrk 5..:

Mitchell, J A J ; Ward, M J ; Kynoch, D...
Monthly Notices of the Royal Astronomical Society.  529 (2024)  4 - p. 4824-4839 , 2024
 
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