Pourghaderi, Mohammad Ali
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2

NEGF simulations of stacked silicon nanosheet FETs for perf..:

, In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
 
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3

Effective work-function tuning of TiN/HfO2/SiO2 gate-stack;..:

, In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
 
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4

Performance evaluation of FinFETs: From multisubband BTE to..:

, In: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Jin, Seonghoon ; Pham, Anh-Tuan ; Choi, Woosung... - p. 109-115 , 2016
 
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6

List of contributors:

, In: Scheduling and Operation of Virtual Power Plants,
 
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7

Critical Backscattering Length in Nanotransistors:

Pourghaderi, M. Ali ; Pham, Anh-Tuan ; Park, Hong-Hyun...
IEEE Electron Device Letters.  43 (2022)  2 - p. 180-183 , 2022
 
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10

General 2D Schrödinger-Poisson solver with open boundary co..:

Pourghaderi, M. Ali ; Magnus, Wim ; Sorée, Bart...
Journal of Computational Electronics.  7 (2008)  4 - p. 475-484 , 2008
 
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14

Deterministic and Probabilistic Models for Energy Managemen..:

, In: Energy Systems; Handbook of Optimization in Electric Power Distribution Systems,
 
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