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Preobrazhenskii, R. K.
162
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Online (162)
Mediatypes
E-Books (1)
Articles (Online) (159)
Bookchapter (Online) (2)
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?
1
Effects of cooling end-window photomultipliers used in micr..:
Polyakov, Ya. S.
;
Rozanov, Yu. M.
;
Preobrazhenskii, R. K.
Journal of Applied Spectroscopy. 13 (1970) 3 - p. 1284-1286 , 1970
Link:
https://doi.org/10.1007/..
?
2
Method of estimating strength of gas-turbine guide vanes wi..:
Belyakov, A. R.
;
Getsov, L. B.
;
Kononov, K. M.
..
Strength of Materials. 24 (1992) 4 - p. 309-316 , 1992
Link:
https://doi.org/10.1007/..
?
3
Synthetic studies in the field of the porphyrins. synthesis..:
Ostrovskaya, N. K.
;
Mironov, A. F.
;
Evstigneeva, R. P.
.
Chemistry of Heterocyclic Compounds. 5 (1972) 4 - p. 470-473 , 1972
Link:
https://doi.org/10.1007/..
?
4
Growth, spectroscopy and high power laser operation of Yb:Y..:
Rudenkov, A.S.
;
Kisel, V.E.
;
Gorbachenya, K.N.
...
Optical Materials. 89 (2019) - p. 261-267 , 2019
Link:
https://doi.org/10.1016/..
?
5
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrat..:
Abramkin, D. S.
;
Petrushkov, M. O.
;
Putyato, M. A.
...
Semiconductors. 53 (2019) 9 - p. 1143-1147 , 2019
Link:
https://doi.org/10.1134/..
?
6
Influence of a Low-Temperature GaAs Dislocation Filter on t..:
Abramkin, D. S.
;
Petrushkov, M. O.
;
Emel'yanov, E. A.
...
Optoelectronics, Instrumentation and Data Processing. 54 (2018) 2 - p. 181-186 , 2018
Link:
https://doi.org/10.3103/..
?
7
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs qua..:
Krishtopenko, S. S.
;
Ikonnikov, A. V.
;
Maremyanin, K. V.
...
Semiconductors. 51 (2017) 1 - p. 38-42 , 2017
Link:
https://doi.org/10.1134/..
?
8
Formation and crystal structure of GaSb/GaP quantum dots:
Abramkin, D. S.
;
Emelyanov, E. A.
;
Putyato, M. A.
...
Bulletin of the Russian Academy of Sciences: Physics. 80 (2016) 1 - p. 17-22 , 2016
Link:
https://doi.org/10.3103/..
?
9
Impact of LT-GaAs layers on crystalline properties of the e..:
Petrushkov, M O
;
Putyato, M A
;
Gutakovsky, A K
...
Journal of Physics: Conference Series. 741 (2016) - p. 012020 , 2016
Link:
https://doi.org/10.1088/..
?
10
Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry a..:
Tereshchenko, O. E.
;
Golyashov, V. A.
;
Eremeev, S. V.
...
Applied Physics Letters. 107 (2015) 12 - p. , 2015
Link:
https://doi.org/10.1063/..
?
11
InAsSb on GaAs (001): influence of the arsenic molecules fo..:
Emel'yanov, E A
;
Vasev, A V
;
Semyagin, B R
...
Journal of Physics: Conference Series. 643 (2015) - p. 012006 , 2015
Link:
https://doi.org/10.1088/..
?
12
Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates:
Emelyanov, E. A.
;
Feklin, D. F.
;
Putyato, M. A.
...
Optoelectronics, Instrumentation and Data Processing. 50 (2014) 3 - p. 224-233 , 2014
Link:
https://doi.org/10.3103/..
?
13
New system of self-assembled GaSb/GaP quantum dots:
Abramkin, D. S.
;
Putyato, M. A.
;
Gutakovskii, A. K.
...
Semiconductors. 46 (2012) 12 - p. 1534-1538 , 2012
Link:
https://doi.org/10.1134/..
?
14
Atomic structure and energy spectrum of Ga(As,P)/GaP hetero..:
Abramkin, D. S.
;
Putyato, M. A.
;
Budennyy, S. A.
...
Journal of Applied Physics. 112 (2012) 8 - p. , 2012
Link:
https://doi.org/10.1063/..
?
15
Transport properties of the two-dimensional electron gas in..:
Pogosov, A. G.
;
Budantsev, M. V.
;
Lavrov, R. A.
...
physica status solidi (a). 203 (2006) 9 - p. 2186-2189 , 2006
Link:
https://doi.org/10.1002/..
1-15