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Preobrazhenskii, Valerii V
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1

Performance improvement mechanisms of pyramid-like via hole..:

Tseng, Chun-Yen ; Lee, Ching-Ting ; Pchelyakov, Oleg P..
Solar Energy.  118 (2015)  - p. 1-6 , 2015
Link: https://doi.org/10.1016/..
 
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2

A valved cracking phosphorus beam source using InP thermal ..:

Putyato, Mikhail A ; Preobrazhenskii, Valerii V ; Semyagin, Boris R...
Semiconductor Science and Technology.  24 (2009)  5 - p. 055014 , 2009
Link: https://doi.org/10.1088/..
 
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3

Structure and Optical Properties of a Composite AsSb–Al0.6G..:

Snigirev, L. A. ; Ushanov, V. I. ; Ivanov, A. A....
Semiconductors.  57 (2023)  13 - p. 615-620 , 2023
Link: https://doi.org/10.1134/..
 
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4

Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy:

Semyagin, B. R. ; Kolesnikov, A. V. ; Putyato, M. A....
Semiconductors.  57 (2023)  9 - p. 405-409 , 2023
Link: https://doi.org/10.1134/..
 
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5

Investigation of Semiconductor Tunnel-Coupled Quantum Wells:

Rubtsova, N. N. ; Kovalyov, A. A. ; Ledovskikh, D. V....
Optoelectronics, Instrumentation and Data Processing.  58 (2022)  6 - p. 579-583 , 2022
Link: https://doi.org/10.3103/..
 
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6

Single Photon Detectors Based on InP/InGaAs/InP Avalanche P..:

Preobrazhenskii, V. V. ; Chistokhin, I. B. ; Putyato, M. A....
Optoelectronics, Instrumentation and Data Processing.  57 (2021)  5 - p. 485-493 , 2021
Link: https://doi.org/10.3103/..
 
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7

Semiconductor quantum well based shutters for NIR laser mod..:

Rubtsova, N N ; Kovalyov, A A ; Ledovskikh, D V...
Journal of Physics: Conference Series.  2067 (2021)  1 - p. 012017 , 2021
Link: https://doi.org/10.1088/..
 
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8

Optical Gates Based on Semiconductor Quantum Wells A$${}_{\..:

Rubtsova, N. N. ; Kovalev, A. A. ; Ledovskikh, D. V....
Optoelectronics, Instrumentation and Data Processing.  57 (2021)  5 - p. 468-475 , 2021
Link: https://doi.org/10.3103/..
 
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9

Properties of Quantum Wells and Their Application in Femtos..:

Rubtsova, N. N. ; Borisov, G. M. ; Kovalyov, A. A....
Optoelectronics, Instrumentation and Data Processing.  56 (2020)  5 - p. 527-532 , 2020
Link: https://doi.org/10.3103/..
 
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10

Effect of the Crystallographic Orientation of GaSb Films on..:

Petrushkov, M. O. ; Abramkin, D. S. ; Emelyanov, E. A....
Semiconductors.  54 (2020)  12 - p. 1548-1554 , 2020
Link: https://doi.org/10.1134/..
 
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11

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic..:

Emelyanov, E. A. ; Nastovjak, A. G. ; Petrushkov, M. O....
Technical Physics Letters.  46 (2020)  2 - p. 161-164 , 2020
Link: https://doi.org/10.1134/..
 
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12

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells..:

Utochkin, V. V. ; Fadeev, M. A. ; Krishtopenko, S. S....
Semiconductors.  54 (2020)  9 - p. 1119-1122 , 2020
Link: https://doi.org/10.1134/..
 
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13

Reasons of Crystallite Formation during the Self-Catalyzed ..:

Nastovjak, A. G. ; Shwartz, N. L. ; Emelyanov, E. A....
Semiconductors.  54 (2020)  14 - p. 1850-1853 , 2020
Link: https://doi.org/10.1134/..
 
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14

Optimization of the In0.3Ga0.7As-Layer Thickness in a Tripl..:

Legan, D. M. ; Pchelyakov, O. P. ; Preobrazhenskii, V. V.
Semiconductors.  54 (2020)  1 - p. 108-111 , 2020
Link: https://doi.org/10.1134/..
 
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15

Picosecond high power Yb:LuAP laser system:

, In: 2020 International Conference Laser Optics (ICLO),
Rudenkov, A. S. ; Kisel, V. E. ; Yasukevich, A. S.... - p. 1-1 , 2020
Link: https://doi.org/10.1109/..
 
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