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Putcha, Vamsi
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1

ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs:

Wu, Wei-Min ; Ker, Ming-Dou ; Chen, Shih-Hung...
IEEE Transactions on Electron Devices.  69 (2022)  4 - p. 2180-2187 , 2022
Link: https://doi.org/10.1109/..
 
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2

Impact of channel thickness scaling on the performance of G..:

, In: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC),
Alian, Alireza ; Rodriguez, Raul ; Yadav, Sachin... - p. 384-387 , 2022
Link: https://doi.org/10.1109/..
 
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3

Leakage mechanism in ion implantation isolated AlGaN/GaN he..:

Yu, Hao ; Putcha, Vamsi ; Peralagu, Uthayasankaran...
Journal of Applied Physics.  131 (2022)  3 - p. , 2022
Link: https://doi.org/10.1063/..
 
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4

Extensive assessment of the charge-trapping kinetics in InG..:

Putcha, Vamsi ; Franco, Jacopo ; Vais, Abhitosh...
Microelectronics Reliability.  115 (2020)  - p. 113996 , 2020
Link: https://doi.org/10.1016/..
 
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5

(Invited) Advanced Transistors for High Frequency Applicati..:

Parvais, Bertrand ; Peralagu, Uthayasankaran ; Vais, Abhitosh...
ECS Transactions.  97 (2020)  5 - p. 27-38 , 2020
Link: https://doi.org/10.1149/..
 
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6

(Plenary) The Revival of Compound Semiconductors and How Th..:

Collaert, Nadine ; Alian, AliReza ; Banerjee, Aritra...
ECS Transactions.  98 (2020)  5 - p. 15-25 , 2020
Link: https://doi.org/10.1149/..
 
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7

On the impact of Gate field-plate length and barrier layer ..:

, In: 2020 IEEE International Integrated Reliability Workshop (IIRW),
Lin, Chien-Yu ; Putcha, Vamsi ; Alian, Alireza... - p. 1-7 , 2020
Link: https://doi.org/10.1109/..
 
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8

Materials and Defect Aspects of III-V and III-N Devices for..:

, In: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT),
Simoen, Eddy ; Hsu, Po-Chun Brent ; Yu, Hao... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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9

Reliability in Stacked Gate-All-Around Si Nanowire Devices:..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
Chasin, Adrian ; Horiguchi, Naoto ; Linten, Dimitri... - p. 1-8 , 2019
Link: https://doi.org/10.1109/..
 
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10

On the distribution of oxide defect levels in Al2O3 and HfO..:

Vais, Abhitosh ; Franco, Jacopo ; Lin, Dennis...
Journal of Applied Physics.  121 (2017)  14 - p. , 2017
Link: https://doi.org/10.1063/..
 
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