E-LIB Suche - Ergebnisse für: Quay, R.

1

Towards Vertical GaN-Power ICs: Co-integration of Lateral H..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Doring, P. ; Basler, M. ; Reiner, R.... - p. 382-385 , 2024

Link: https://doi.org/10.1109/..

2

X-Band 100-W High-Voltage GaN Internally Matched FET with L..:

, In: IGARSS 2023 - 2023 IEEE International Geoscience and Remote Sensing Symposium,

Krause, S. ; Quay, R. - p. 4617-4620 , 2023

Link: https://doi.org/10.1109/..

3

Advances in GaN Devices and Circuits at Higher mm-Wave Freq..:

Neininger, P. ; Mikulla, M. ; Döring, P....
e-Prime - Advances in Electrical Engineering, Electronics and Energy. 4 (2023) - p. 100177 , 2023

Link: https://doi.org/10.1016/..

4

Voltage-margin limiting mechanisms of AlScN-based HEMTs:

Döring, P. ; Krause, S. ; Waltereit, P....
Applied Physics Letters. 123 (2023) 3 - p. , 2023

Link: https://doi.org/10.1063/..

5

Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers:

Neininger, Philipp ; John, L. ; Zink, M....
IEEE Microwave and Wireless Components Letters. 32 (2022) 6 - p. 708-711 , 2022

Link: https://doi.org/10.1109/..

6

Polarization induced interface and electron sheet charges o..:

Ambacher, O. ; Christian, B. ; Yassine, M....
Journal of Applied Physics. 129 (2021) 20 - p. , 2021

Link: https://doi.org/10.1063/..

7

Study of Power Amplifier Harmonic Output Termination for tw..:

, In: 2020 23rd International Microwave and Radar Conference (MIKON),

Samis, S. ; Friesicke, C. ; Lozar, R.... - p. 196-199 , 2020

Link: https://doi.org/10.23919..

8

Broadband High-Efficiency Power Amplifiers in 150 nm AlGaN/..:

, In: 2020 IEEE Asia-Pacific Microwave Conference (APMC),

Samis, S. ; Friesicke, C. ; Maier, T... - p. 260-262 , 2020

Link: https://doi.org/10.1109/..

9

Deep Submicron III-N HEMTs – Technological Development and ..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),

Quay, R. ; Dammann, M. ; Kemmer, T.... - p. 17.1.1-17.1.4 , 2019

Link: https://doi.org/10.1109/..

10

High-Power-Density AlGaN/GaN Technology for 100-V Operation..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),

Krause, S. ; Bruckner, P. ; Dammann, M.. - p. 17.4.1-17.4.4 , 2019

Link: https://doi.org/10.1109/..

11

MBE of III-Nitride Semiconductors for Electronic Devices:

, In: Molecular Beam Epitaxy,

Aidam, Rolf J. ; Ambacher, O. ; Diwo, E.... - p. 108-134 , 2019

Link: https://doi.org/10.1002/..

12

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-..:

Dammann, M. ; Baeumler, M. ; Brückner, P....
Microelectronics Reliability. 88-90 (2018) - p. 385-388 , 2018

Link: https://doi.org/10.1016/..

13

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applicati..:

Dammann, M. ; Baeumler, M. ; Polyakov, V....
Microelectronics Reliability. 76-77 (2017) - p. 292-297 , 2017

Link: https://doi.org/10.1016/..

14

Anticipatory modeling for water supply sustainability in Ph..:

Sampson, D.A. ; Quay, R. ; White, D.D.
Environmental Science & Policy. 55 (2016) - p. 36-46 , 2016

Link: https://doi.org/10.1016/..

15

Internally-packaged-matched continuous inverse class-FI wid..:

, In: 2016 11th European Microwave Integrated Circuits Conference (EuMIC),

Carrubba, V. ; Maroldt, S. ; Ture, E.... - p. 233-236 , 2016

Link: https://doi.org/10.1109/..