Qurashi, Umar S.
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8

Ruthenium related deep-level defects in n-type GaAs:

Naz, Nazir A. ; Qurashi, Umar S. ; Majid, A..
Physica B: Condensed Matter.  404 (2009)  23-24 - p. 4956-4958 , 2009
 
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Thermal annealing study of as-grown n-type MOCVD GaAs:

Naz, Nazir A. ; Qurashi, Umar S. ; Zafar Iqbal, M.
Physica B: Condensed Matter.  401-402 (2007)  - p. 242-245 , 2007
 
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Deep levels in α-irradiated p-type MOCVD GaAs:

Naz, Nazir A. ; Qurashi, Umar S. ; Zafar Iqbal, M.
Physica B: Condensed Matter.  401-402 (2007)  - p. 503-506 , 2007
 
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13

Deep levels in GaAs/Al0.78Ga0.22As heterostructures:

Qurashi, Umar S. ; Naz, Nazir A. ; Naeem Khan, M....
Physica B: Condensed Matter.  401-402 (2007)  - p. 266-269 , 2007
 
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14

Doubly charged state of EL2 defect in MOCVD-grown GaAs:

Naz, Nazir A. ; Qurashi, Umar S. ; Majid, Abdul.
Physica B: Condensed Matter.  401-402 (2007)  - p. 250-253 , 2007
 
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Deep levels in nitrogen-doped MBE-grown p-ZnSe:

Qurashi, Umar S ; Iqbal, M Zafar
Semiconductor Science and Technology.  12 (1997)  12 - p. 1615-1618 , 1997
 
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