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Radu, Iuliana P.
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1

Atomically Resolved Defect-Engineering Scattering Potential..:

Chen, Hao-Yu ; Hsu, Hung-Chang ; Liang, Jhih-Yuan...
ACS Nano.  18 (2024)  27 - p. 17622-17629 , 2024
Link: https://doi.org/10.1021/..
 
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2

Contact Optimization Through Annealing and Edge Functionali..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Li, Meng-Zhan ; Hung, Terry Y.T. ; Yun, Wei Sheng... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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3

High-performance monolayer MoS2 nanosheet GAA transistor:

Chou, Bo-Jhih ; Chung, Yun-Yan ; Yun, Wei-Sheng...
Nanotechnology.  35 (2024)  12 - p. 125204 , 2024
Link: https://doi.org/10.1088/..
 
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4

Antimony–Platinum Modulated Contact Enabling Majority Carri..:

Lin, Yu-Tung ; Hsu, Ching-Hao ; Chou, Ang-Sheng...
Nano Letters.  24 (2024)  29 - p. 8880-8886 , 2024
Link: https://doi.org/10.1021/..
 
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5

Scaled contact length with low contact resistance in monola..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Wu, Wen-Chia ; Hung, Terry Y.T. ; Sathaiya, D. Mahaveer... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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6

Self‐Aligned Contact Doping for Performance Enhancement of ..:

Chiu, Hsin‐Yuan ; Chao, Tzu‐Ang ; Safron, Nathaniel S....
Advanced Electronic Materials.  10 (2023)  3 - p. , 2023
Link: https://doi.org/10.1002/..
 
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7

Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Chung, Yun-Yan ; Yun, Wei-Sheng ; Chou, Bo-Jhih... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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8

Comprehensive Study of Contact Length Scaling Down to 12 nm..:

Wu, Wen-Chia ; Hung, Terry Y. T. ; Sathaiya, D. Mahaveer...
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6680-6686 , 2023
Link: https://doi.org/10.1109/..
 
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9

Effect of Metal Coupling on Schottky Barrier Height Extract..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Su, Sheng-Kai ; Chen, Edward ; Sanchez-Soares, Alfonso... - p. 109-112 , 2023
Link: https://doi.org/10.23919..
 
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10

High-Endurance MoS2 FeFET with Operating Voltage Fess Than ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Lee, Tsung-En ; Chiang, Hung-Li ; Chang, Chih-Yu... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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11

Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characte..:

Chang, Teng-Jan ; Chen, Hsing-Yang ; Wang, Chin-I...
Acta Materialia.  246 (2023)  - p. 118707 , 2023
Link: https://doi.org/10.1016/..
 
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12

Analytical Modeling of Source-to-Drain Tunneling Current Do..:

Han, Hung-Chi ; Chiang, Hung-Li ; Radu, Iuliana P..
IEEE Electron Device Letters.  44 (2023)  5 - p. 717-720 , 2023
Link: https://doi.org/10.1109/..
 
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13

Status and Performance of Integration Modules Toward Scaled..:

, In: 2023 International Electron Devices Meeting (IEDM),
Chou, Ang-Sheng ; Hsu, Ching-Hao ; Lin, Yu-Tung... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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14

Low N-Type Contact Resistance to Carbon Nanotubes in Highly..:

, In: 2023 International Electron Devices Meeting (IEDM),
Safron, Nathaniel ; Chiu, Hsin-Yuan ; Chao, Tzu-Ang... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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15

Comprehensive Physics Based TCAD Model for 2D MX2 Channel T..:

, In: 2022 International Electron Devices Meeting (IEDM),
Sathaiya, D. Mahaveer ; Hung, Terry Y.T. ; Chen, Edward... - p. 28.4.1-28.4.4 , 2022
Link: https://doi.org/10.1109/..
 
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