Raghothamachar, Balaji
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2

Analysis of dislocation configurations in SiC crystals thro..:

Cheng, Qianyu ; Chen, Zeyu ; Hu, Shanshan...
Materials Science in Semiconductor Processing.  174 (2024)  - p. 108207 , 2024
 
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Defect-curing effects of fast neutrons on n-type GaN:

Kim, Jeongwoo ; Liu, Yafei ; Raghothamachar, Balaji..
Materials Chemistry and Physics.  315 (2024)  - p. 128934 , 2024
 
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Edge Termination Design Considerations for 1.2kV 4H-SiC MOS..:

, In: 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
 
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15

Strain mapping of GaN substrates and epitaxial layers used ..:

Liu, Yafei ; Chen, Zeyu ; Hu, Shanshan...
Journal of Crystal Growth.  583 (2022)  - p. 126559 , 2022
 
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