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Rahimo, Munaf
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1

TCAD-Based Investigation of a 3.3 kV Planar SiC MOSFET: BV-..:

, In: 2024 IEEE 18th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG),
Scognamillo, Ciro ; Catalano, Antonio Pio ; D'Alessandro, Vincenzo... - p. 1-4 , 2024
Link: https://doi.org/10.1109/..
 
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2

Design and Optimization of 3.3 kV Silicon Carbide Semi-Supe..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Melnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze... - p. 132-135 , 2024
Link: https://doi.org/10.1109/..
 
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3

Life-cycle energy demand comparison of medium voltage Silic..:

Spejo, Lucas Barroso ; Akor, Innocent ; Rahimo, Munaf.
Power Electronic Devices and Components.  6 (2023)  - p. 100050 , 2023
Link: https://doi.org/10.1016/..
 
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4

Enhancing Efficiency and Reliability of Electric Vehicles v..:

, In: 2023 IEEE 26th International Conference on Intelligent Transportation Systems (ITSC),
Sandel, Luca ; Zardini, Gioele ; Mitrova, Sofija... - p. 2226-2232 , 2023
Link: https://doi.org/10.1109/..
 
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5

Analysis of the RC-IGBT snap-back phenomenon on the switchi..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Rahimo, Munaf ; Reigosa, Paula Diaz ; Schulz, Nicola. - p. 482-485 , 2020
Link: https://doi.org/10.1109/..
 
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6

Pushing the Limits of the Maximum Punch-Through Design with..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Buitrago, Elizabeth ; Schneider, Nick ; Corvasce, Chiara... - p. 509-512 , 2020
Link: https://doi.org/10.1109/..
 
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7

Advanced High Voltage Reverse Conducting RC-IGBT Technology..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Zhu, Liheng ; Rahimo, Munaf ; Luo, Haihui... - p. 513-516 , 2020
Link: https://doi.org/10.1109/..
 
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8

An Investigation into the Dynamic Behavior of 3.3kV MOSFETs..:

Mihaila, Andrei ; Bianda, Enea ; Knoll, Lars...
Materials Science Forum.  963 (2019)  - p. 621-624 , 2019
Link: https://doi.org/10.4028/..
 
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9

Soft‐punch‐through buffer concept for 600–1200 V IGBTs:

Andenna, Maxi ; Buitrago, Elizabeth ; Corvasce, Chiara...
IET Power Electronics.  12 (2019)  15 - p. 3874-3881 , 2019
Link: https://doi.org/10.1049/..
 
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10

A Critical View of IGBT Buffer Designs for 200 °C Operation:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Buitrago, Elizabeth ; Mesemanolis, Athanasios ; Andenna, Maxi... - p. 47-50 , 2019
Link: https://doi.org/10.1109/..
 
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11

Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Ap..:

Mihaila, Andrei ; Knoll, Lars ; Kranz, Lukas...
Materials Science Forum.  924 (2018)  - p. 597-600 , 2018
Link: https://doi.org/10.4028/..
 
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12

The influence of humidity on the high voltage blocking reli..:

Papadopoulos, Charalampos ; Corvasce, Chiara ; Kopta, Arnost...
Microelectronics Reliability.  88-90 (2018)  - p. 470-475 , 2018
Link: https://doi.org/10.1016/..
 
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13

On the Influence of Active Area Design on the Performance o..:

Mihaila, Andrei ; Minamisawa, Renato Amaral ; Knoll, Lars...
Materials Science Forum.  897 (2017)  - p. 471-474 , 2017
Link: https://doi.org/10.4028/..
 
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14

Performance Evaluation and Expected Challenges of Silicon C..:

Rahimo, Munaf
Materials Science Forum.  897 (2017)  - p. 649-654 , 2017
Link: https://doi.org/10.4028/..
 
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15

The impact on power semiconductor device operation due to l..:

Rahimo, Munaf ; Richter, Frank ; Fischer, Fabian...
Microelectronics Reliability.  58 (2016)  - p. 51-57 , 2016
Link: https://doi.org/10.1016/..
 
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