E-LIB Suche - Ergebnisse für: Raja, P. Vigneshwara

1

Inspection of Trapping and Detrapping Dynamics in Fe- and C..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Raja, P. Vigneshwara ; Painter, Vaidehi Vijay ; Sommet, Raphael. - p. 1-3 , 2024

Link: https://doi.org/10.1109/..

2

Electrical characteristics and trap signatures for Schottky..:

Kumari, Shikha ; Singh, Rashmi ; Kumar, Shivam...
Semiconductor Science and Technology. , 2024

Link: https://doi.org/10.1088/..

3

Estimation of Zero-Field Activation Energy for Traps in Fe-..:

Raja, P. Vigneshwara ; Painter, Vaidehi Vijay ; Dupouy, Emmanuel..
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1626-1632 , 2024

Link: https://doi.org/10.1109/..

4

Electrically active traps in 4H-silicon carbide (4H-SiC) Pi..:

Raja, P. Vigneshwara ; Raynaud, Christophe ; Asllani, Besar..
Journal of Materials Science: Materials in Electronics. 34 (2023) 17 - p. , 2023

Link: https://doi.org/10.1007/..

5

HTRB Stress Effects on Static and Dynamic Characteristics o..:

Raja, P. Vigneshwara ; Nallatamby, Jean-Christophe ; Bouslama, Mohamed...
IEEE Transactions on Microwave Theory and Techniques. 71 (2023) 5 - p. 1957-1966 , 2023

Link: https://doi.org/10.1109/..

6

Deep Level Transient Fourier Spectroscopy (DLTFS) and Isoth..:

Raja, P. Vigneshwara ; Raynaud, Christophe ; Sonneville, Camille...
Micro and Nanostructures. 172 (2022) - p. 207433 , 2022

Link: https://doi.org/10.1016/..

7

Surface and Buffer Trap Signatures in Fe-doped AlGaN/GaN HE..:

, In: 2022 17th European Microwave Integrated Circuits Conference (EuMIC),

Nallatamby, Jean-Christophe ; Silva Dos Santos, Jose Anderson ; Raja, P. Vigneshwara.. - p. 1-4 , 2022

Link: https://doi.org/10.23919..

8

Comprehensive characterization of vertical GaN-on-GaN Schot..:

Raja, P. Vigneshwara ; Raynaud, Christophe ; Sonneville, Camille...
Microelectronics Journal. 128 (2022) - p. 105575 , 2022

Link: https://doi.org/10.1016/..

9

Estimation of Trapping Induced Dynamic Reduction in 2DEG De..:

Raja, P. Vigneshwara ; Dupouy, Emmanuel ; Bouslama, Mohamed..
IEEE Transactions on Electron Devices. 69 (2022) 9 - p. 4864-4869 , 2022

Link: https://doi.org/10.1109/..

10

HTRB Stress Effects on 0.15 µm AlGaN/GaN HEMT Performance:

, In: 2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO),

Raja, P. Vigneshwara ; Nallatamby, Jean-Christophe ; Bouslama, Mohamed... - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

11

Trapping effects on AlGaN/GaN HEMT characteristics:

Vigneshwara Raja, P. ; Nallatamby, Jean-Christophe ; DasGupta, Nandita.
Solid-State Electronics. 176 (2021) - p. 107929 , 2021

Link: https://doi.org/10.1016/..

12

Identification of Buffer and Surface Traps in Fe-Doped AlGa..:

Raja, P. Vigneshwara ; Subramani, Nandha Kumar ; Gaillard, Florent...
Electronics. 10 (2021) 24 - p. 3096 , 2021

Link: https://doi.org/10.3390/..

13

Thermally annealed gamma irradiated Ni/4H-SiC Schottky barr..:

Raja, P. Vigneshwara ; Narasimha Murty, N. V. L.
Journal of Semiconductors. 40 (2019) 2 - p. 022804 , 2019

Link: https://doi.org/10.1088/..

14

Simulation of Self-Heating and Bulk Trapping Effects on Dra..:

, In: 2018 4th IEEE International Conference on Emerging Electronics (ICEE),

Raja, P. Vigneshwara ; DasGupta, Nandita ; DasGupta, Amitava - p. 1-6 , 2018

Link: https://doi.org/10.1109/..

15

Thermal annealing studies in epitaxial 4H-SiC Schottky barr..:

Vigneshwara Raja, P. ; Narasimha Murty, N.V.L.
Microelectronics Reliability. 87 (2018) - p. 213-221 , 2018

Link: https://doi.org/10.1016/..