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Ramonas, M.
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1

Terahertz oscillations in gallium nitride quantum-well chan..:

Ramonas, M. ; Liberis, J. ; Šimukovič, A....
Journal of Applied Physics.  128 (2020)  5 - p. 055702 , 2020
Link: https://doi.org/10.1063/..
 
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2

Electron drift velocity in wurtzite ZnO at high electric fi..:

Ardaravičius, L. ; Kiprijanovič, O. ; Ramonas, M....
Journal of Applied Physics.  126 (2019)  18 - p. , 2019
Link: https://doi.org/10.1063/..
 
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3

Hot-electron energy relaxation time in Ga-doped ZnO films:

Šermukšnis, E. ; Liberis, J. ; Ramonas, M....
Journal of Applied Physics.  117 (2015)  6 - p. , 2015
Link: https://doi.org/10.1063/..
 
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4

Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels:

Liberis, J ; Ramonas, M ; Šermukšnis, E...
Semiconductor Science and Technology.  29 (2014)  4 - p. 045018 , 2014
Link: https://doi.org/10.1088/..
 
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5

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN ca..:

Leach, J. H. ; Wu, M. ; Morkoç, H....
Journal of Applied Physics.  110 (2011)  10 - p. , 2011
Link: https://doi.org/10.1063/..
 
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6

Camelback channel for fast decay of LO phonons in GaN heter..:

Šermukšnis, E. ; Liberis, J. ; Ramonas, M....
Applied Physics Letters.  99 (2011)  4 - p. , 2011
Link: https://doi.org/10.1063/..
 
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7

Electron drift velocity in lattice-matched AlInN/AlN/GaN ch..:

Ardaravičius, L. ; Ramonas, M. ; Liberis, J....
Journal of Applied Physics.  106 (2009)  7 - p. , 2009
Link: https://doi.org/10.1063/..
 
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8

Plasmon-enhanced heat dissipation in GaN-based two-dimensio..:

Matulionis, A. ; Liberis, J. ; Matulionienė, I....
Applied Physics Letters.  95 (2009)  19 - p. , 2009
Link: https://doi.org/10.1063/..
 
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9

Monte Carlo evaluation of an analytical model for nonequili..:

Ramonas, M ; Matulionis, A ; Eastman, L F
Semiconductor Science and Technology.  22 (2007)  8 - p. 875-879 , 2007
Link: https://doi.org/10.1088/..
 
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10

Hot phonons in Si-doped GaN:

Liberis, J. ; Ramonas, M. ; Kiprijanovic, O....
Applied Physics Letters.  89 (2006)  20 - p. , 2006
Link: https://doi.org/10.1063/..
 
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11

Comparative analysis of hot‐electron transport in AlGaN/GaN..:

Ardaravičius, L. ; Ramonas, M. ; Kiprijanovic, O....
physica status solidi (a).  202 (2005)  5 - p. 808-811 , 2005
Link: https://doi.org/10.1002/..
 
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12

Hot-phonon effect on power dissipation in a biasedAlxGa1−xN..:

Ramonas, M. ; Matulionis, A. ; Liberis, J....
Physical Review B.  71 (2005)  7 - p. , 2005
Link: https://doi.org/10.1103/..
 
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13

Monte Carlo simulation of hot-phonon effects in a biased Al..:

Ramonas, M ; Matulionis, A
Semiconductor Science and Technology.  19 (2004)  4 - p. S424-S426 , 2004
Link: https://doi.org/10.1088/..
 
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14

Electron drift velocity in AlGaN/GaN channel at high electr..:

Ardaravičius, L. ; Matulionis, A. ; Liberis, J....
Applied Physics Letters.  83 (2003)  19 - p. 4038-4040 , 2003
Link: https://doi.org/10.1063/..
 
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15

Monte Carlo simulation of hot-phonon and degeneracy effects..:

Ramonas, M ; Matulionis, A ; Rota, L
Semiconductor Science and Technology.  18 (2003)  2 - p. 118-123 , 2003
Link: https://doi.org/10.1088/..
 
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