I agree that this site is using cookies. You can find further informations here.
X
Rampazzo, F.
292  results:
Search for persons X
?
1

Impact of high-temperature operating lifetime tests on the ..:

Pilati, M. ; Buffolo, M. ; Rampazzo, F....
Microelectronics Reliability.  150 (2023)  - p. 115131 , 2023
Link: https://doi.org/10.1016/..
 
?
2

Geomorphological, sedimentological, and ecological characte..:

Romano, E. ; Bergamin, L. ; Berto, D....
Marine Geology.  455 (2023)  - p. 106952 , 2023
Link: https://doi.org/10.1016/..
 
?
3

Novel approach of combined planar and cross-sectional defec..:

Graff, A. ; Simon-Najasek, M. ; Hübner, S....
Microelectronics Reliability.  150 (2023)  - p. 115096 , 2023
Link: https://doi.org/10.1016/..
 
?
4

Impact of doping and geometry on breakdown voltage of semi-..:

Favero, D. ; De Santi, C. ; Mukherjee, K....
Microelectronics Reliability.  138 (2022)  - p. 114620 , 2022
Link: https://doi.org/10.1016/..
 
?
5

Study of the influence of gate etching and passivation on c..:

Chiocchetta, F. ; De Santi, C. ; Rampazzo, F....
Microelectronics Reliability.  138 (2022)  - p. 114735 , 2022
Link: https://doi.org/10.1016/..
 
?
6

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-..:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
Chiocchetta, F. ; Calascione, C. ; De Santi, C.... - p. 1-2 , 2021
Link: https://doi.org/10.1109/..
 
?
7

Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on..:

Chiocchetta, F. ; De Santi, C. ; Rampazzo, F....
Microelectronics Reliability.  126 (2021)  - p. 114259 , 2021
Link: https://doi.org/10.1016/..
 
?
8

Review on the degradation of GaN-based lateral power transi..:

De Santi, C. ; Buffolo, M. ; Rossetto, I....
e-Prime - Advances in Electrical Engineering, Electronics and Energy.  1 (2021)  - p. 100018 , 2021
Link: https://doi.org/10.1016/..
 
?
9

A geometrically based criterion to avoid infimum gaps in op..:

Palladino, M. ; Rampazzo, F.
Journal of Differential Equations.  269 (2020)  11 - p. 10107-10142 , 2020
Link: https://doi.org/10.1016/..
 
?
10

Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects o..:

Gao, Z. ; Rampazzo, F. ; Meneghini, M....
Microelectronics Reliability.  114 (2020)  - p. 113905 , 2020
Link: https://doi.org/10.1016/..
 
?
11

Reliability comparison of AlGaN/GaN HEMTs with different ca..:

Gao, Z. ; Meneghini, M. ; Rampazzo, F....
Microelectronics Reliability.  100-101 (2019)  - p. 113489 , 2019
Link: https://doi.org/10.1016/..
 
?
12

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs:

Rzin, M. ; Meneghini, M. ; Rampazzo, F....
Microelectronics Reliability.  100-101 (2019)  - p. 113388 , 2019
Link: https://doi.org/10.1016/..
 
?
13

Factors controlling sediment and nutrient fluxes in a small..:

Bonometto, A. ; Feola, A. ; Rampazzo, F....
Science of The Total Environment.  650 (2019)  - p. 1832-1845 , 2019
Link: https://doi.org/10.1016/..
 
?
14

Effects of buffer compensation strategies on the electrical..:

Bisi, D. ; Stocco, A. ; Rossetto, I....
Microelectronics Reliability.  55 (2015)  9-10 - p. 1662-1666 , 2015
Link: https://doi.org/10.1016/..
 
?
15

Impact of proton fluence on DC and trapping characteristics..:

Rossetto, I. ; Rampazzo, F. ; Gerardin, S....
Solid-State Electronics.  113 (2015)  - p. 15-21 , 2015
Link: https://doi.org/10.1016/..
 
1-15