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Rampazzo, Fabiana
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1

V-Pits and Trench-Like Defects in High Periodicity MQWs GaN..:

Nicoletto, Marco ; Caria, Alessandro ; Rampazzo, Fabiana...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 2051-2057 , 2024
Link: https://doi.org/10.1109/..
 
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2

Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxia..:

Zanoni, Enrico ; De Santi, Carlo ; Gao, Zhan...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1396-1407 , 2024
Link: https://doi.org/10.1109/..
 
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3

Impact of the oxide aperture width on the degradation of 84..:

Zenari, Michele ; Buffolo, Matteo ; Rampazzo, Fabiana...
IEEE Journal of Selected Topics in Quantum Electronics.  , 2024
Link: https://doi.org/10.1109/..
 
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4

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobil..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Saro, Marco ; de Pieri, Francesco ; Carlotto, Andrea... - p. 5B.2-1-5B.2-8 , 2024
Link: https://doi.org/10.1109/..
 
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5

Transconductance Overshoot, a New Trap-Related Effect in Al..:

Zhan, Gao ; Rampazzo, Fabiana ; De Santi, Carlo...
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 3005-3010 , 2023
Link: https://doi.org/10.1109/..
 
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6

Thermally-activated failure mechanisms of 0.25 \ \mu \mathr..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Gao, Zhan ; Chiocchetta, Francesca ; Rampazzo, Fabiana... - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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7

Dynamic Behavior of Threshold Voltage and ID–VDS Kink in Al..:

Gao, Zhan ; De Santi, Carlo ; Rampazzo, Fabiana...
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6256-6261 , 2023
Link: https://doi.org/10.1109/..
 
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8

Influence of V-Pits on the Turn-On Voltage of GaN-Based Hig..:

Nicoletto, Marco ; Caria, Alessandro ; Rampazzo, Fabiana...
IEEE Journal of Photovoltaics.  13 (2023)  6 - p. 891-898 , 2023
Link: https://doi.org/10.1109/..
 
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9

Failure Physics and Reliability of GaN‐Based HEMTs for Micr..:

Zanoni, Enrico ; Rampazzo, Fabiana ; De Santi, Carlo...
physica status solidi (a).  219 (2022)  24 - p. , 2022
Link: https://doi.org/10.1002/..
 
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10

Short term reliability and robustness of ultra-thin barrier..:

Gao, ZHan ; Meneghini, Matteo ; Harrouche, Kathia...
Microelectronics Reliability.  123 (2021)  - p. 114199 , 2021
Link: https://doi.org/10.1016/..
 
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11

Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs:

, In: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),
Chiocchetta, Francesca ; Calascione, Claudia ; De Santi, Carlo... - p. 90-94 , 2021
Link: https://doi.org/10.1109/..
 
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12

Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN..:

Gao, Zhan ; Rampazzo, Fabiana ; Meneghini, Matteo...
Microelectronics Reliability.  126 (2021)  - p. 114318 , 2021
Link: https://doi.org/10.1016/..
 
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13

Short Term Reliability and Robustness of ultra-thin barrier..:

, In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),
Gao, Zhan. ; Meneghini, Matteo. ; Harrouche, Kathia... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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14

Reliability Physics of GaN HEMT Microwave Devices: The Age ..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Zanoni, Enrico ; Meneghini, Matteo ; Meneghesso, Gaudenzio... - p. 1-10 , 2020
Link: https://doi.org/10.1109/..
 
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15

Electrical and Electroluminescence Characteristics of AlGaN..:

Meneghini, Matteo ; Zanandrea, Alberto ; Rampazzo, Fabiana...
Japanese Journal of Applied Physics.  52 (2013)  8S - p. 08JN17 , 2013
Link: https://doi.org/10.7567/..
 
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