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Ramvall, P.
22  results:
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1

Core-Shell TFET Developments and TFET Limitations:

, In: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA),
Passlack, M. ; Ramvall, P. ; Vasen, T.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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2

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Ty..:

Vasen, T. ; Ramvall, P. ; Afzalian, A....
Scientific Reports.  9 (2019)  1 - p. , 2019
Link: https://doi.org/10.1038/..
 
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3

Physics and performances of III–V nanowire broken-gap heter..:

Afzalian, A ; Vasen, T ; Ramvall, P...
Journal of Physics: Condensed Matter.  30 (2018)  25 - p. 254002 , 2018
Link: https://doi.org/10.1088/..
 
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4

InAs hole inversion and bandgap interface state density of ..:

Wang, C. H. ; Wang, S. W. ; Doornbos, G....
Applied Physics Letters.  103 (2013)  14 - p. , 2013
Link: https://doi.org/10.1063/..
 
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5

MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.8..:

Ramvall, P. ; Wang, C.H. ; Astromskas, G....
Journal of Crystal Growth.  374 (2013)  - p. 43-48 , 2013
Link: https://doi.org/10.1016/..
 
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6

Coulomb blockade and resonant tunnelling in etched and regr..:

Shorubalko, I ; Ramvall, P ; Xu, H Q...
Semiconductor Science and Technology.  16 (2001)  9 - p. 741-744 , 2001
Link: https://doi.org/10.1088/..
 
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7

Investigations of optical and electrical properties of In-d..:

Shen, X.Q ; Ramvall, P ; Riblet, P...
Journal of Crystal Growth.  209 (2000)  2-3 - p. 396-400 , 2000
Link: https://doi.org/10.1016/..
 
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8

Optical characterization of the "E2" deep level in GaN:

Hacke, P. ; Ramvall, P. ; Tanaka, S....
Applied Physics Letters.  74 (1999)  4 - p. 543-545 , 1999
Link: https://doi.org/10.1063/..
 
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9

GaN Quantum Structures with Fractional Dimension — From Qua..:

Tanaka, S. ; Suemune, I. ; Ramvall, P..
physica status solidi (b).  216 (1999)  1 - p. 431-434 , 1999
Link: https://doi.org/10.1002/..
 
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10

Conductance oscillations in overgrown sub 100 nm InP/ quant..:

Maximov, I ; Carlsson, N ; Omling, P...
Semiconductor Science and Technology.  13 (1998)  8A - p. A67-A70 , 1998
Link: https://doi.org/10.1088/..
 
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11

Quantum transport in high mobility modulation doped Ga0.25I..:

Ramvall, P. ; Carlsson, N. ; Omling, P....
Journal of Applied Physics.  84 (1998)  4 - p. 2112-2122 , 1998
Link: https://doi.org/10.1063/..
 
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12

MOVPE growth of and heterostructures for electronic transpo..:

Carlsson, N. ; Anand, S. ; Carlsson, S.-B....
Journal of Crystal Growth.  170 (1997)  1-4 - p. 127-131 , 1997
Link: https://doi.org/10.1016/..
 
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13

Quantized conductance in a heterostructurally defined Ga0.2..:

Ramvall, P. ; Carlsson, N. ; Maximov, I....
Applied Physics Letters.  71 (1997)  7 - p. 918-920 , 1997
Link: https://doi.org/10.1063/..
 
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14

Large negative magnetoresistance introduced by line disloca..:

Ramvall, P. ; Carlsson, N. ; Omling, P...
Superlattices and Microstructures.  21 (1997)  2 - p. 231-236 , 1997
Link: https://doi.org/10.1006/..
 
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15

Tuning of the single-particle relaxation time of a high mob..:

Ramvall, P. ; Carlsson, N. ; Omling, P....
Applied Physics Letters.  70 (1997)  2 - p. 243-245 , 1997
Link: https://doi.org/10.1063/..
 
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