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Ramvall, Peter
23  results:
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1

(Invited) Wide Bandgap Semiconductor Based Devices for Digi..:

Wang, Qin ; Kumar, Ashutosh ; Berg, Martin...
ECS Transactions.  112 (2023)  2 - p. 37-43 , 2023
Link: https://doi.org/10.1149/..
 
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2

Growth of p-type GaN – The role of oxygen in activation of ..:

Kumar, Ashutosh ; Berg, Martin ; Wang, Qin..
Power Electronic Devices and Components.  5 (2023)  - p. 100036 , 2023
Link: https://doi.org/10.1016/..
 
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3

p-GaN activation through oxygen-assisted annealing – What i..:

, In: 2022 Compound Semiconductor Week (CSW),
Kumar, Ashutosh ; Berg, Martin ; Wang, Qin.. - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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4

Vertical GaN devices: Process and reliability:

You, Shuzhen ; Geens, Karen ; Borga, Matteo...
Microelectronics Reliability.  126 (2021)  - p. 114218 , 2021
Link: https://doi.org/10.1016/..
 
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5

Sn Incorporation in Ultrathin InAs Nanowires for Next-Gener..:

Giddings, A. Devin ; Ramvall, Peter ; Vasen, Tim...
ACS Applied Nano Materials.  2 (2019)  3 - p. 1253-1258 , 2019
Link: https://doi.org/10.1021/..
 
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6

Atomically flat and uniform relaxed III–V epitaxial films o..:

Holland, Martin ; van Dal, Mark ; Duriez, Blandine...
Scientific Reports.  7 (2017)  1 - p. , 2017
Link: https://doi.org/10.1038/..
 
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7

Field-Effect Mobility of InAs Surface Channel nMOSFET With ..:

Shih-Wei Wang ; Vasen, Timothy ; Doornbos, Gerben...
IEEE Transactions on Electron Devices.  62 (2015)  8 - p. 2429-2436 , 2015
Link: https://doi.org/10.1109/..
 
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8

In situ etching for total control over axial and radial nan..:

Borgström, Magnus T. ; Wallentin, Jesper ; Trägårdh, Johanna...
Nano Research.  3 (2010)  4 - p. 264-270 , 2010
Link: https://doi.org/10.1007/..
 
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9

A UV Light-Emitting Diode Incorporating GaN Quantum Dots:

Tanaka, Satoru ; Lee, Jeong-Sik ; Ramvall, Peter.
Japanese Journal of Applied Physics.  42 (2003)  Part 2, No. 8A - p. L885-L887 , 2003
Link: https://doi.org/10.1143/..
 
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10

Doping-dependent optical gain in GaN:

Ramvall, Peter ; Aoyagi, Yoshinobu ; Kuramata, Akito...
Applied Physics Letters.  76 (2000)  21 - p. 2994-2996 , 2000
Link: https://doi.org/10.1063/..
 
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11

Optical properties of GaN quantum dots:

Ramvall, Peter ; Riblet, Philippe ; Nomura, Shintaro..
Journal of Applied Physics.  87 (2000)  8 - p. 3883-3890 , 2000
Link: https://doi.org/10.1063/..
 
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12

Size-dependent optical nonlinearities in GaN quantum dots:

Riblet, Philippe ; Tanaka, Satoru ; Ramvall, Peter..
Solid State Communications.  109 (1999)  6 - p. 377-381 , 1999
Link: https://doi.org/10.1016/..
 
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13

Effect of indium doping on the transient optical properties..:

Kumano, Hidekazu ; Hoshi, Ken-ichi ; Tanaka, Satoru...
Applied Physics Letters.  75 (1999)  19 - p. 2879-2881 , 1999
Link: https://doi.org/10.1063/..
 
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14

Improvements of the Optical and Electrical Properties of Ga..:

Shen, Xu-Qiang ; Ramvall, Peter ; Riblet, Philippe.
Japanese Journal of Applied Physics.  38 (1999)  4B - p. L411 , 1999
Link: https://doi.org/10.1143/..
 
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15

Confinement induced decrease of the exciton-longitudinal op..:

Ramvall, Peter ; Tanaka, Satoru ; Nomura, Shintaro..
Applied Physics Letters.  75 (1999)  13 - p. 1935-1937 , 1999
Link: https://doi.org/10.1063/..
 
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