E-LIB Suche - Ergebnisse für: Révész, G.

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Physica status solidi

Volume 24, Number 1: November 1 Physica status solidi ; Volume 24, Number 1

Abdinov, D. Sh ; Abdulov, R. Z ; Abend, H... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Physica status solidi

Volume 72, Number 2: August 16 Physica status solidi ; Volume 72, Number 2, A

Akhmetov, V. D ; Alonso, J. A ; Anagnostopoulos, A. N... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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Physica status solidi

Volume 19, Number 1: January 1 Physica status solidi ; Volume 19, Number 1

Aluker, E.D ; Antonov-Romanovskii, V. V ; Babnes, R. G... - Reprint 2021 . , [2022]

Link: https://doi.org/10.1515/..

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The structural aspects of non-crystalline SiO2 films on sil..:

Revesz, A.G. ; Hughes, H.L.
Journal of Non-Crystalline Solids. 328 (2003) 1-3 - p. 48-63 , 2003

Link: https://doi.org/10.1016/..

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Density gradient in SiO2 films on silicon as revealed by po..:

Revesz, A.G ; Anwand, W ; Brauer, G..
Applied Surface Science. 194 (2002) 1-4 - p. 101-105 , 2002

Link: https://doi.org/10.1016/..

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Nuclear reaction analysis of hydrogen in the buried SiO2 la..:

Krauser, J ; Revesz, A.G ; Hughes, H.L
Journal of Non-Crystalline Solids. 296 (2001) 1-2 - p. 143-145 , 2001

Link: https://doi.org/10.1016/..

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Concentration dependence of the dielectric constant in mixe..:

Devine, R. A. B. ; Revesz, A. G.
Journal of Applied Physics. 90 (2001) 1 - p. 389-393 , 2001

Link: https://doi.org/10.1063/..

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Effects of heat treatments in inert ambients on Si/SiO2 str..:

Revesz, A.G ; Hughes, H.L
Journal of Non-Crystalline Solids. 254 (1999) 1-3 - p. 47-56 , 1999

Link: https://doi.org/10.1016/..

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Photoluminescence spectra of SIMOX buried oxide layers prep..:

Rebohle, L. ; Revesz, A.G. ; Skorupa, W..
Microelectronic Engineering. 48 (1999) 1-4 - p. 335-338 , 1999

Link: https://doi.org/10.1016/..

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Structural Rearrangement of SiO2 Films during Their Growth ..:

Revesz, A. G.
Journal of The Electrochemical Society. 146 (1999) 6 - p. 2225-2228 , 1999

Link: https://doi.org/10.1149/..

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Suppression of thermal interface degradation in (111) Si/Si..:

Stesmans, A. ; Afanas'ev, V. V. ; Revesz, A. G.
Applied Physics Letters. 74 (1999) 10 - p. 1466-1468 , 1999

Link: https://doi.org/10.1063/..

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Blocking of thermally induced interface degradation in (111..:

Stesmans, A ; Afanas'ev, V V ; Revesz, A G
Journal of Physics: Condensed Matter. 10 (1998) 22 - p. L367-L371 , 1998

Link: https://doi.org/10.1088/..

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Oxygen Vacancies in SiO2 Layers on Si Produced at High Temp..:

Afanas'ev, V. V. ; Stesmans, A. ; Revesz, A. G..
Journal of The Electrochemical Society. 145 (1998) 9 - p. 3157-3160 , 1998

Link: https://doi.org/10.1149/..

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Properties of the buried oxide layer in SIMOX structures:

Revesz, A.G. ; Hughes, H.L.
Microelectronic Engineering. 36 (1997) 1-4 - p. 343-350 , 1997

Link: https://doi.org/10.1016/..

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Mechanism for Si island retention in buried SiO2 layers for..:

Afanas'ev, V. V. ; Stesmans, A. ; Revesz, A. G..
Applied Physics Letters. 71 (1997) 15 - p. 2106-2108 , 1997

Link: https://doi.org/10.1063/..