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Reboh, S
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1

Methodology for parameters extraction with undoped junction..:

Zerhouni Abdou, N. ; Reboh, S. ; Brunet, L....
Solid-State Electronics.  217 (2024)  - p. 108897 , 2024
Link: https://doi.org/10.1016/..
 
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2

Low Temperature Junction Formation for EZ-FET:

Zerhouni Abdou, N. ; Acosta Alba, P. ; Brunet, L....
IEEE Journal of the Electron Devices Society.  12 (2024)  - p. 384-389 , 2024
Link: https://doi.org/10.1109/..
 
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3

Undoped junctionless EZ-FET: Model and measurements:

Zerhouni Abdou, N. ; Reboh, S. ; Alepidis, M....
Solid-State Electronics.  208 (2023)  - p. 108731 , 2023
Link: https://doi.org/10.1016/..
 
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4

EZ-FET junctions activation by nanosecond laser annealing:

, In: 2023 21st International Workshop on Junction Technology (IWJT),
Abdou, N. Zerhouni ; Acosta-Alba, P. ; Brunet, L.... - p. 1-4 , 2023
Link: https://doi.org/10.23919..
 
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5

RF figures of merit of polysilicon trap-rich layers formed ..:

, In: 2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,
Perrose, M. ; Alba, P. Acosta ; Moulin, M.... - p. 25-27 , 2023
Link: https://doi.org/10.1109/..
 
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6

Demonstration of 3D sequential FD-SOI on CMOS FinFET stacki..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Vandooren, A. ; Parihar, N. ; Franco, J.... - p. 330-331 , 2022
Link: https://doi.org/10.1109/..
 
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7

A simple test structure for the electrical characterization..:

Alepidis, M. ; Ionica, I. ; Milesi, F....
Solid-State Electronics.  185 (2021)  - p. 108047 , 2021
Link: https://doi.org/10.1016/..
 
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8

3D sequential integration: applications and associated key ..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Batude, P. ; Billoint, O. ; Thuries, S.... - p. 3.2.1-3.2.4 , 2021
Link: https://doi.org/10.1109/..
 
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9

Elucidating the capability of electron backscattering for 3..:

Trombini, H ; Vos, M ; Reboh, S.
Journal of Physics D: Applied Physics.  53 (2020)  42 - p. 425103 , 2020
Link: https://doi.org/10.1088/..
 
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10

Imaging, Modeling and Engineering of Strain in Gate-All-Aro..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Reboh, S. ; Boureau, V. ; Yamashita, T.... - p. 11.5.1-11.5.4 , 2019
Link: https://doi.org/10.1109/..
 
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11

Strain, stress, and mechanical relaxation in fin-patterned ..:

Reboh, S. ; Coquand, R. ; Barraud, S....
Applied Physics Letters.  112 (2018)  5 - p. , 2018
Link: https://doi.org/10.1063/..
 
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12

Nanobeam Diffraction and Geometric Phase Analysis for Strai..:

Li, J. ; Reboh, S. ; Chao, Robin...
Microscopy and Microanalysis.  22 (2016)  S3 - p. 1528-1529 , 2016
Link: https://doi.org/10.1017/..
 
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13

Converting SOI to sSOI through Amorphization and Crystalliz..:

Maitrejean, S. ; Loubet, N. ; Augendre, E....
ECS Journal of Solid State Science and Technology.  4 (2015)  9 - p. P376-P381 , 2015
Link: https://doi.org/10.1149/..
 
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14

Modelling of point defect complex formation and its applica..:

Cherkashin, N. ; Darras, F.-X. ; Pochet, P....
Acta Materialia.  99 (2015)  - p. 187-195 , 2015
Link: https://doi.org/10.1016/..
 
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15

Dynamical effects in strain measurements by dark-field elec..:

Javon, E. ; Lubk, A. ; Cours, R....
Ultramicroscopy.  147 (2014)  - p. 70-85 , 2014
Link: https://doi.org/10.1016/..
 
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