E-LIB Suche - Ergebnisse für: Reynes, Jean-Michel

1

First results on 1.2 kV SiC MOSFET body diode robustness te..:

Hamad, Hassan ; Tournier, Dominique ; Reynes, Jean-Michel...
Microelectronics Reliability. 151 (2023) - p. 115264 , 2023

Link: https://doi.org/10.1016/..

2

VDS and VGS Depolarization Effect on SiC MOSFET Short-Circu..:

Barazi, Yazan ; Richardeau, Frédéric ; Jouha, Wadia.
Energies. 14 (2021) 23 - p. 7960 , 2021

Link: https://doi.org/10.3390/..

3

Electrothermal Characterization of Double-Sided Cooling Si ..:

, In: Lecture Notes in Electrical Engineering; ELECTRIMACS 2019,

Sanchez, Sébastien ; Nguyen, C. ; Cadile, Claudia... - p. 59-70 , 2020

Link: https://doi.org/10.1007/..

4

Investigation of SiC MOSFET channel reverse conduction:

, In: 2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS),

Chuc, Nguyen Quang ; Tounsi, Patrick ; Fradin, Jean-Pierre. - p. 1-4 , 2019

Link: https://doi.org/10.1109/..

5

Power MOSFET quality and robustness enhancement with a new ..:

Pomès, Emilie ; Reynès, Jean-Michel ; Tounsi, Patrick.
Materials Science and Engineering: B. 177 (2012) 15 - p. 1362-1366 , 2012

Link: https://doi.org/10.1016/..

6

Copper metallization influence on power MOS reliability:

Feybesse, Adeline ; Deram, Ivana ; Reynes, Jean-Michel.
Microelectronics Reliability. 43 (2003) 4 - p. 571-576 , 2003

Link: https://doi.org/10.1016/..

7

Failure Degradation Similarities on Power SiC MOSFET Device..:

Oliveira, Joao ; Frey, Pascal ; Morel, Hervé...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2023.115166. , 2023

Link: https://hal.science/hal-..

8

First Results on 1.2 kV SiC MOSFET Body Diode Robustness Te..:

Hamad, Hassan ; Tournier, Dominique ; Reynes, Jean-Michel...
hal-04240602. , 2023

Link: https://hal.science/hal-..

9

Failure Degradation Similarities on Power SiC MOSFET Device..:

Oliveira, Joao ; Frey, Pascal ; Morel, Hervé...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2023.115166. , 2023

Link: https://hal.science/hal-..

10

Failure Degradation Similarities on Power SiC MOSFET Device..:

Oliveira, Joao ; Frey, Pascal ; Morel, Hervé...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2023.115166. , 2023

Link: https://hal.science/hal-..

11

Failure Degradation Similarities on Power SiC MOSFET Device..:

Oliveira, Joao ; Frey, Pascal ; Morel, Hervé...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2023.115166. , 2023

Link: https://hal.science/hal-..

12

Failure Degradation Similarities on Power SiC MOSFET Device..:

Oliveira, Joao ; Frey, Pascal ; Morel, Hervé...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2023.115166. , 2023

Link: https://hal.science/hal-..

13

First Results on 1.2 kV SiC MOSFET Body Diode Robustness Te..:

Hamad, Hassan ; Tournier, Dominique ; Reynes, Jean-Michel...
hal-04240602. , 2023

Link: https://hal.science/hal-..

14

First Results on 1.2 kV SiC MOSFET Body Diode Robustness Te..:

Hamad, Hassan ; Tournier, Dominique ; Reynes, Jean-Michel...
hal-04240602. , 2023

Link: https://hal.science/hal-..

15

First Results on 1.2 kV SiC MOSFET Body Diode Robustness Te..:

Hamad, Hassan ; Tournier, Dominique ; Reynes, Jean-Michel...
hal-04240602. , 2023

Link: https://hal.science/hal-..