E-LIB Suche - Ergebnisse für: Rodwell, M. J. W.

1

IC and Array Technologies for 100-300GHz Wireless:

, In: 2022 IEEE Custom Integrated Circuits Conference (CICC),

Rodwell, M. J. W ; Ahmed, A. S. H. ; Seo, M.... - p. 01-05 , 2022

Link: https://doi.org/10.1109/..

2

Optical Phase-Locking and Wavelength Synthesis:

, In: 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS),

Rodwell, M. J. W. ; Park, H. C. ; Piels, M.... - p. 1-4 , 2014

Link: https://doi.org/10.1109/..

3

Co-doping of InxGa1−xAs with silicon and tellurium for impr..:

Law, J.J.M. ; Carter, A.D. ; Lee, S....
Journal of Crystal Growth. 378 (2013) - p. 92-95 , 2013

Link: https://doi.org/10.1016/..

4

III-V MOSFETs: Scaling laws, scaling limits, fabrication pr..:

, In: 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM),

Rodwell, M. J. W. ; Shin, B. ; Lee, Yong-ju... - p. 1-6 , 2010

Link: https://doi.org/10.1109/..

5

Height-selective etching for regrowth of self-aligned conta..:

Burek, G.J. ; Wistey, M.A. ; Singisetti, U....
Journal of Crystal Growth. 311 (2009) 7 - p. 1984-1987 , 2009

Link: https://doi.org/10.1016/..

6

Transistor and circuit design for 100-200-GHz ICs:

Griffith, Z. ; Yingda Dong ; Scott, D....
IEEE Journal of Solid-State Circuits. 40 (2005) 10 - p. 2061-2069 , 2005

Link: https://doi.org/10.1109/..

7

Design and characteristics of strained InAs/InAlAs composit..:

Lin, H.-K. ; Kadow, C. ; Bae, J.-U....
Journal of Applied Physics. 97 (2004) 2 - p. , 2004

Link: https://doi.org/10.1063/..

8

InAs/InAsP composite channels for antimonide-based field-ef..:

Lin, H.-K. ; Kadow, C. ; Dahlström, M....
Applied Physics Letters. 84 (2004) 3 - p. 437-439 , 2004

Link: https://doi.org/10.1063/..

9

Wideband DHBTs using a graded carbon-doped InGaAs base:

Dahlstrom, M. ; Fang, X.-M. ; Lubyshev, D....
IEEE Electron Device Letters. 24 (2003) 7 - p. 433-435 , 2003

Link: https://doi.org/10.1109/..

10

InP/In0.53Ga0.47As/InP double heterojunction bipolar transi..:

Kim, Y.M ; Dahlstrǒm, M ; Lee, S..
Solid-State Electronics. 46 (2002) 10 - p. 1541-1544 , 2002

Link: https://doi.org/10.1016/..

11

Thermal characteristics of InP, InAlAs, and AlGaAsSb metamo..:

Kim, Y. M. ; Rodwell, M. J. W. ; Gossard, A. C.
Journal of Electronic Materials. 31 (2002) 3 - p. 196-199 , 2002

Link: https://doi.org/10.1007/..

12

Effect of threading dislocations on AlGaN/GaN heterojunctio..:

McCarthy, L. ; Smorchkova, I. ; Xing, H....
Applied Physics Letters. 78 (2001) 15 - p. 2235-2237 , 2001

Link: https://doi.org/10.1063/..

13

Terahertz excitation of AFM-defined room temperature quantu..:

Qureshi, N. ; Scott, J.S. ; Allen Jr, S.J....
Physica E: Low-dimensional Systems and Nanostructures. 2 (1998) 1-4 - p. 701-703 , 1998

Link: https://doi.org/10.1016/..

14

THz response of GaAs/AlGaAs superlattices: from classical t..:

Zeuner, S. ; Keay, B.J. ; Allen, S.J....
Superlattices and Microstructures. 22 (1997) 2 - p. 149-154 , 1997

Link: https://doi.org/10.1006/..

15

Virtual states, dynamic localization, absolute negative con..:

Keay, B J ; Aversa, C ; Zeuner, S...
Semiconductor Science and Technology. 11 (1996) 11S - p. 1596-1600 , 1996

Link: https://doi.org/10.1088/..