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2022 International Electron Devices Meeting (IEDM) ,
1
Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-..:
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2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
2
1200V GaN Switches on Sapphire Substrate:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
3
GaN/AlGaN superlattice based E-mode p-channel MES-FinFET wi..:
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2021 IEEE International Reliability Physics Symposium (IRPS) ,
4
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-..:
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2019 14th European Microwave Integrated Circuits Conference (EuMIC) ,
6
Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar..:
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2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ,
7
High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 1..:
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2016 IEEE International Electron Devices Meeting (IEDM) ,
9