Romano, Gianpaolo
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3

Gate Impedance Analysis of SiC power MOSFETs with SiO2 and ..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
 
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6

Gate Stress Study on SiN-Based SiC Power MOSFETs:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
 
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10

Study of 1.2kV High-k SiC Power MOSFETS Under Harsh Repetit..:

, In: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
 
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12

Vertical Power SiC MOSFETs with High-k Gate Dielectrics and..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Wirths, Stephan ; Arango, Yulieth ; Mihaila, Andrei... - p. 226-229 , 2020
 
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13

Single and repetitive surge current events of 3.3 kV-20 A 4..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Donato, Nazareno ; Udrea, Florin ; Mihaila, Andrei... - p. 198-201 , 2020
 
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