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Rosseel, Erik
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1

Crystallinity and composition of Sc1−x(−y)Six (Py ) silicid..:

Pollefliet, Bert ; Porret, Clement ; Everaert, Jean-Luc...
Japanese Journal of Applied Physics.  63 (2024)  2 - p. 02SP97 , 2024
Link: https://doi.org/10.35848..
 
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2

Low temperature selective growth of Ga-doped and Ga–B co-do..:

Porret, Clement ; Rengo, Gianluca ; Ayyad, Mustafa...
Japanese Journal of Applied Physics.  62 (2023)  SC - p. SC1043 , 2023
Link: https://doi.org/10.35848..
 
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3

Properties of Selectively Grown Si:P Layers below 500°C for..:

Rosseel, Erik ; Porret, Clement ; Hikavyy, Andriy Yakovitch...
ECS Transactions.  109 (2022)  4 - p. 93-98 , 2022
Link: https://doi.org/10.1149/..
 
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4

(Digital Presentation) Selective SiGe Vapor Etching Using B..:

Loo, Roger ; Gosset, Nicolas ; Isaji, Megumi...
ECS Transactions.  109 (2022)  4 - p. 135-140 , 2022
Link: https://doi.org/10.1149/..
 
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5

B and Ga Co-Doped Si1−xGex for p-Type Source/Drain Contacts:

Rengo, Gianluca ; Porret, Clement ; Hikavyy, Andriy...
ECS Journal of Solid State Science and Technology.  11 (2022)  2 - p. 024008 , 2022
Link: https://doi.org/10.1149/..
 
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6

Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Sourc..:

Rengo, Gianluca ; Porret, Clement ; Hikavyy, Andriy Yakovitch...
ECS Transactions.  104 (2021)  4 - p. 167-179 , 2021
Link: https://doi.org/10.1149/..
 
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7

Source/Drain Materials for Ge nMOS Devices: Phosphorus Acti..:

Vohra, Anurag ; Makkonen, Ilja ; Pourtois, Geoffrey...
ECS Journal of Solid State Science and Technology.  9 (2020)  4 - p. 044010 , 2020
Link: https://doi.org/10.1149/..
 
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8

(Invited) Highly Doped Si1-XGex Epitaxy in View of S/D Appl..:

Rengo, Gianluca ; Porret, Clement ; Hikavyy, Andriy Yakovitch...
ECS Transactions.  98 (2020)  5 - p. 27-36 , 2020
Link: https://doi.org/10.1149/..
 
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9

On the Correlation Between Static and Low-Frequency Noise P..:

Simoen, Eddy ; Chasin, Adrian ; Matagne, Philippe...
ECS Transactions.  97 (2020)  5 - p. 59-64 , 2020
Link: https://doi.org/10.1149/..
 
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10

Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:A..:

Rosseel, Erik ; Porret, Clement ; Hikavyy, Andriy Yakovitch...
ECS Transactions.  98 (2020)  5 - p. 37-42 , 2020
Link: https://doi.org/10.1149/..
 
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11

Application of Cl2 for low temperature etch and epitaxy:

Hikavyy, Andriy ; Porret, Clement ; Rosseel, Erik..
Semiconductor Science and Technology.  34 (2019)  7 - p. 074003 , 2019
Link: https://doi.org/10.1088/..
 
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12

Characterization of Highly Doped Si:P, Si:As and Si:P:As Ep..:

Rosseel, Erik ; Tirrito, Matteo ; Porret, Clement...
ECS Transactions.  93 (2019)  1 - p. 11-15 , 2019
Link: https://doi.org/10.1149/..
 
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13

Insights into the C Distribution in Si:C/Si:C:P and the Ann..:

Dhayalan, Sathish Kumar ; Nuytten, Thomas ; Pourtois, Geoffrey...
ECS Journal of Solid State Science and Technology.  8 (2019)  4 - p. P209-P216 , 2019
Link: https://doi.org/10.1149/..
 
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14

Transient Overshoot of Sub-10nm Bulk FinFET ESD Diodes with..:

, In: 2019 41st Annual EOS/ESD Symposium (EOS/ESD),
Chen, Shih-Hung ; Horiguchi, Naoto ; Linten, Dimitri... - p. 1-8 , 2019
Link: https://doi.org/10.23919..
 
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15

Source/Drain Materials for Ge nMOS Devices:

Vohra, Anurag ; Porret, Clement ; Rosseel, Erik...
ECS Transactions.  93 (2019)  1 - p. 29-33 , 2019
Link: https://doi.org/10.1149/..
 
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