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Rossetto, Isabella
30
results:
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Online (30)
Mediatypes
Articles (Online) (15)
OpenAccess-fulltext (15)
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1
Field and hot electron-induced degradation in GaN-based pow..:
Tajalli, Alaleh
;
Meneghini, Matteo
;
Rossetto, Isabella
...
Microelectronics Reliability. 76-77 (2017) - p. 282-286 , 2017
Link:
https://doi.org/10.1016/..
?
2
Gate Stability of GaN-Based HEMTs with P-Type Gate:
Meneghini, Matteo
;
Rossetto, Isabella
;
Rizzato, Vanessa
...
Electronics. 5 (2016) 2 - p. 14 , 2016
Link:
https://doi.org/10.3390/..
?
3
Study of the stability of e-mode GaN HEMTs with p-GaN gate ..:
Rossetto, Isabella
;
Meneghini, Matteo
;
Rizzato, Vanessa
...
Microelectronics Reliability. 64 (2016) - p. 547-551 , 2016
Link:
https://doi.org/10.1016/..
?
4
Trapping and reliability issues in GaN-based MIS HEMTs with..:
Meneghesso, Gaudenzio
;
Meneghini, Matteo
;
Bisi, Davide
...
Microelectronics Reliability. 58 (2016) - p. 151-157 , 2016
Link:
https://doi.org/10.1016/..
?
5
Trapping phenomena in AlGaN/GaN HEMTs: a study based on pul..:
Meneghesso, Gaudenzio
;
Meneghini, Matteo
;
Bisi, Davide
...
Semiconductor Science and Technology. 28 (2013) 7 - p. 074021 , 2013
Link:
https://doi.org/10.1088/..
?
6
(Invited) Electric-Field and Thermally-Activated Failure Me..:
Zanoni, Enrico
;
Meneghesso, Gaudenzio
;
Meneghini, Matteo
...
ECS Transactions. 41 (2011) 8 - p. 237-249 , 2011
Link:
https://doi.org/10.1149/..
?
7
ESD sensitivity of a GaAs MMIC microwave power amplifier:
Tazzoli, Augusto
;
Rossetto, Isabella
;
Zanoni, Enrico
...
Microelectronics Reliability. 51 (2011) 9-11 - p. 1602-1607 , 2011
Link:
https://doi.org/10.1016/..
?
8
Transmission Line Pulse (TLP) as integrative method for the..:
Merlo, Luca
;
Rossetto, Isabella
;
Cerati, Lorenzo
...
http://arxiv.org/abs/2002.08716. , 2020
Link:
http://arxiv.org/abs/200..
?
9
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si ..:
Borga, Matteo
;
Meneghini, Matteo
;
Rossetto, Isabella
...
info:eu-repo/semantics/altIdentifier/wos/WOS:000408118700013. , 2017
Link:
http://hdl.handle.net/11..
?
10
Gate stability of GaN-Based HEMTs with P-Type Gate:
MENEGHINI, MATTEO
;
ROSSETTO, ISABELLA
;
MENEGHESSO, GAUDENZIO
...
info:eu-repo/semantics/altIdentifier/wos/WOS:000380002600001. , 2016
Link:
http://hdl.handle.net/11..
?
11
From GaAs to GaN technology: study of limits and reliabilit..:
Rossetto, Isabella
alleditors:Ferrari, Carlo. , 2014
Link:
http://hdl.handle.net/11..
?
12
Gate Stability of GaN-Based HEMTs with P-Type Gate:
Matteo Meneghini
;
Isabella Rossetto
;
Vanessa Rizzato
...
https://zenodo.org/record/49359. , 2016
Link:
https://zenodo.org/recor..
?
13
Gate Stability of GaN-Based HEMTs with P-Type Gate:
Matteo Meneghini
;
Isabella Rossetto
;
Vanessa Rizzato
...
Microelectronics. , 2016
Link:
https://doi.org/10.3390/..
?
14
Looking for a preventive approach to sexual harassment in a..:
Zara, Georgia
;
Binik, Oriana
;
Ginocchio, Debora
...
European Journal on Criminal Policy and Research. , 2024
Link:
https://doi.org/10.1007/..
?
15
Intra-familiar homicides: From 2006 to 2021 in the judicial..:
Vignali, Giulia
;
Blandino, Alberto
;
Rossetto, Ilaria
.
Journal of Forensic and Legal Medicine. 93 (2023) - p. 102453 , 2023
Link:
https://doi.org/10.1016/..
1-15