Rossow, U.
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1

Adapting epicutaneous patch testing protocols to assess imm..:

Mehling, A. ; Benard, S. ; Braun, N....
International Journal of Cosmetic Science.  42 (2020)  4 - p. 328-335 , 2020
 
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2

Indium incorporation into InGaN: The role of the adlayer:

Rossow, U. ; Horenburg, P. ; Ketzer, F...
Journal of Crystal Growth.  464 (2017)  - p. 112-118 , 2017
 
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8

Measuring composition in InGaN from HAADF-STEM images and s..:

Mehrtens, T ; Schowalter, M ; Tytko, D...
Journal of Physics: Conference Series.  471 (2013)  - p. 012009 , 2013
 
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10

Optimizing the growth process of the active zone in GaN bas..:

Rossow, U. ; Kruse, A. ; Jönen, H....
Journal of Crystal Growth.  370 (2013)  - p. 105-108 , 2013
 
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14

Dielectric function and bowing parameters of InGaN alloys:

Sakalauskas, E. ; Tuna, Ö. ; Kraus, A....
physica status solidi (b).  249 (2012)  3 - p. 485-488 , 2012
 
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15

Analysis of indium incorporation in non- and semipolar GaIn..:

Jönen, H ; Bremers, H ; Rossow, U...
Semiconductor Science and Technology.  27 (2012)  2 - p. 024013 , 2012
 
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