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Rozbiegała, Ewelina
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1

Highly effective gating of graphene on GaN:

Kierdaszuk, Jakub ; Rozbiegała, Ewelina ; Piętak, Karolina...
Applied Surface Science.  560 (2021)  - p. 149939 , 2021
Link: https://doi.org/10.1016/..
 
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2

Phosphorus implantation of Mg-doped (Al)GaN heterostructure..:

Piętak, Karolina ; Złotnik, Sebastian ; Rozbiegała, Ewelina...
Journal of Materials Science: Materials in Electronics.  31 (2020)  20 - p. 17892-17902 , 2020
Link: https://doi.org/10.1007/..
 
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3

Determination of Fermi Level Position at the Graphene/GaN I..:

Herman, Artur P. ; Janicki, Lukasz ; Stokowski, Hubert S....
Advanced Materials Interfaces.  7 (2020)  21 - p. , 2020
Link: https://doi.org/10.1002/..
 
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4

Highly effective gating of graphene on GaN:

Kierdaszuk Jakub ; Rozbiegala, Ewelina ; Pietak, Karolina...
https://zenodo.org/communities/eos-charming.  , 2022
Link: https://zenodo.org/recor..
 
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5

Highly effective gating of graphene on GaN:

Kierdaszuk, Jakub ; Rozbiegała, Ewelina ; Piętak, Karolina...
http://arxiv.org/abs/2102.02475.  , 2021
Link: http://arxiv.org/abs/210..
 
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6

Determination of Fermi Level Position at the Graphene/GaN I..:

Artur P. Herman ; Lukasz Janicki ; Hubert S. Stokowski...
https://doi.org/10.1002/admi.202001220.  , 2020
Link: https://doi.org/10.1002/..
 
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