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Ruize, FENG
119  results:
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1

Ultra‐thin Body Buried In0.35Ga0.65As Channel MOSFETs with ..:

Bo, WANG ; Peng, DING ; Ruize, FENG...
Chinese Journal of Electronics.  30 (2021)  6 - p. 1017-1021 , 2021
Link: https://doi.org/10.1049/..
 
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2

Origin and suppression of kink effect in InP high electron ..:

Zhou, Fu-gui ; Feng, Rui-ze ; Cao, Shu-rui...
Applied Physics Letters.  124 (2024)  6 - p. , 2024
Link: https://doi.org/10.1063/..
 
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3

A Four-Port Noise De-Embedding Methodology for On-Wafer Mic..:

Feng, Zhiyu ; Ding, Wucang ; Su, Yongbo...
IEEE Microwave and Wireless Technology Letters.  34 (2024)  7 - p. 943-946 , 2024
Link: https://doi.org/10.1109/..
 
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4

Accurate Modeling Approach for InP fT-Doubler Based on Elec..:

Wang, Yanzhe ; Ding, Jianjun ; Feng, Ruize...
IEEE Transactions on Electron Devices.  70 (2023)  3 - p. 941-946 , 2023
Link: https://doi.org/10.1109/..
 
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5

An Accurate Model for InP HEMT Small-Signal Equivalent Circ..:

Feng, Zhiyu ; Cao, Shurui ; Feng, Ruize...
IEEE Transactions on Electron Devices.  70 (2023)  3 - p. 934-940 , 2023
Link: https://doi.org/10.1109/..
 
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6

Impact of SiO2 hardmask on the DC and RF characteristics of..:

Zhou, Fugui ; Feng, Ruize ; Cao, Shurui...
Journal of Materials Science: Materials in Electronics.  34 (2023)  29 - p. , 2023
Link: https://doi.org/10.1007/..
 
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7

Performance Improvement by SiO₂ Hardmask in 100-nm InP-Base..:

Cao, Shurui ; Feng, Ruize ; Zhou, Fugui...
IEEE Transactions on Electron Devices.  70 (2023)  5 - p. 2262-2267 , 2023
Link: https://doi.org/10.1109/..
 
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8

Impact of symmetric gate-recess length on the DC and RF cha..:

Feng, Ruize ; Wang, Bo ; Cao, Shurui...
Chinese Physics B.  31 (2022)  1 - p. 018505 , 2022
Link: https://doi.org/10.1088/..
 
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9

Impact of gate offset in gate recess on DC and RF performan..:

Cao, Shurui ; Feng, Ruize ; Wang, Bo...
Chinese Physics B.  31 (2022)  5 - p. 058502 , 2022
Link: https://doi.org/10.1088/..
 
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10

Heterogeneous integration of InP HEMTs on quartz wafer usin..:

Wang, Yan-Fu ; Wang, Bo ; Feng, Rui-Ze...
Chinese Physics B.  31 (2022)  1 - p. 018502 , 2022
Link: https://doi.org/10.1088/..
 
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11

High-Performance InGaAs HEMTs on Si Substrates for RF Appli..:

Wang, Bo ; Wang, Yanfu ; Feng, Ruize...
Electronics.  11 (2022)  2 - p. 259 , 2022
Link: https://doi.org/10.3390/..
 
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12

Enhancement of f MAX of InP-based HEMTs by double-recessed ..:

Wang, Bo ; Ding, Peng ; Feng, Rui-Ze...
Chinese Physics B.  31 (2022)  5 - p. 058506 , 2022
Link: https://doi.org/10.1088/..
 
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13

High-Performance InGaAs HEMTs on Si Substrates for RF Appli..:

Bo Wang ; Yanfu Wang ; Ruize Feng...
https://www.mdpi.com/2079-9292/11/2/259.  , 2022
Link: https://doi.org/10.3390/..
 
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14

High-Performance InGaAs HEMTs on Si Substrates for RF Appli..:

Bo Wang ; Yanfu Wang ; Ruize Feng...
Semiconductor Devices.  , 2022
Link: https://doi.org/10.3390/..
 
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15

Early-season estimation of winter wheat yield: A hybrid mac..:

Qiao, Di ; Wang, Tianteng ; Xu, David Jingjun...
Technological Forecasting and Social Change.  201 (2024)  - p. 123267 , 2024
Link: https://doi.org/10.1016/..
 
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