E-LIB Suche - Ergebnisse für: RunSheng, Wang

1

Prospecting criteria for skarn-type iron deposits in the th..:

Runsheng, Wang ; Fangbo, Chen ; Jiabao, Wang...
Journal of Applied Geophysics. 228 (2024) - p. 105442 , 2024

Link: https://doi.org/10.1016/..

2

Electrostatic Signal analysis of rotor UAV:

Xi, Chen ; Runsheng, Wang ; Pengfei, Li..
Journal of Physics: Conference Series. 1894 (2021) 1 - p. 012107 , 2021

Link: https://doi.org/10.1088/..

3

Editor's note:

Ru, Huang ; Bin, Zhao ; RunSheng, Wang.
Science China Information Sciences. 54 (2011) 5 - p. 913-914 , 2011

Link: https://doi.org/10.1007/..

4

Low-field mobility and carrier transport mechanism transiti..:

Hongwei, Liu ; Runsheng, Wang ; Ru, Huang.
Journal of Semiconductors. 31 (2010) 4 - p. 044006 , 2010

Link: https://doi.org/10.1088/..

5

VoIP development in China:

Runsheng Wang ; Xiaorui Hu
Computer. 37 (2004) 9 - p. 30-37 , 2004

Link: https://doi.org/10.1109/..

6

Regularized image restoration based on adaptively selecting..:

, In: Proceedings of the 17th International Conference on Pattern Recognition, 2004. ICPR 2004.,

Xianjin Wu ; Runsheng Wang ; Cheng Wang - p. 662,663,664,665 , 2004

Link: https://doi.org/10.1109/..

7

Range image segmentation based on split-merge clustering:

, In: Proceedings of the 17th International Conference on Pattern Recognition, 2004. ICPR 2004.,

Rihua Xiang ; Runsheng Wang - p. 614,615,616,617 , 2004

Link: https://doi.org/10.1109/..

8

Deuxième vague de "pénétration du savoir occidental" et mét..:

Runsheng, Wang ; Xiaofeng, Zhong
Perspectives Chinoises. , 1992

Link: https://www.jstor.org/st..

9

A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1..:

Song, Jiahao ; Tang, Xiyuan ; Luo, Haoyang...
IEEE Journal of Solid-State Circuits. 59 (2024) 3 - p. 842-854 , 2024

Link: https://doi.org/10.1109/..

10

Unveiling RowPress in Sub-20 nm DRAM Through Comparative An..:

Zhou, Longda ; Ye, Sheng ; Wang, Runsheng.
IEEE Transactions on Electron Devices. 71 (2024) 8 - p. 4677-4684 , 2024

Link: https://doi.org/10.1109/..

11

30.5 A Variation-Tolerant In-eDRAM Continuous-Time Ising Ma..:

, In: 2024 IEEE International Solid-State Circuits Conference (ISSCC),

Song, Jiahao ; Wu, Zihan ; Tang, Xiyuan... - p. 490-492 , 2024

Link: https://doi.org/10.1109/..

12

Intermittent hypoxic pretreatment exacerbates house dust mi..:

Meng, Hao ; Zhang, Dongxue ; Que, Yifan...
Immunity, Inflammation and Disease. 12 (2024) 4 - p. , 2024

Link: https://doi.org/10.1002/..

13

A New Framework to MOS Device for Cryogenic Application: Li..:

, In: 2024 2nd International Symposium of Electronics Design Automation (ISEDA),

Zhang, Chenyang ; Wu, Maokun ; Yuan, Miaojia... - p. 78-83 , 2024

Link: https://doi.org/10.1109/..

14

Exploring tungsten-oxygen vacancy synergy: Impact on leakag..:

Wang, Xuepei ; Wu, Maokun ; Zhang, Ting...
Applied Physics Letters. 124 (2024) 23 - p. , 2024

Link: https://doi.org/10.1063/..

15

Capacitance Modeling With Charge Partitions Covering Full-R..:

Zhang, Fangxing ; Dai, Wu ; Wang, Kaifeng...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4373-4380 , 2024

Link: https://doi.org/10.1109/..