E-LIB Suche - Ergebnisse für: Ryaboshtan, Yu. L.

1

Features of High-Power Uni-Traveling-Carrier InGaAs/InP Pho..:

Bragin, N. N. ; Svetogorov, V. N. ; Ryaboshtan, Yu. L....
Bulletin of the Lebedev Physics Institute. 51 (2024) S2 - p. S180-S184 , 2024

Link: https://doi.org/10.3103/..

2

Low-Voltage InP Heterostyristors for 50–150 ns Current Puls..:

Slipchenko, S. O. ; Podoskin, A. A. ; Gavrina, P. S....
Technical Physics Letters. 49 (2023) S3 - p. S231-S234 , 2023

Link: https://doi.org/10.1134/..

3

New Highly Reliable Optical Transmitting Modules Based on H..:

Sabitov, D. R. ; Svetogorov, V. N. ; Ryaboshtan, Yu. L....
Bulletin of the Lebedev Physics Institute. 50 (2023) S11 - p. S1246-S1251 , 2023

Link: https://doi.org/10.3103/..

4

Implementation of energy barrier layers for 1550 nm high-po..:

Veselov, D.A. ; Pikhtin, N.A. ; Slipchenko, S.O....
Journal of Luminescence. 263 (2023) - p. 120164 , 2023

Link: https://doi.org/10.1016/..

5

Compact superluminescent AlGaInAs/InP strain-compensated qu..:

Sabitov, D.R. ; Svetogorov, V.N. ; Ryaboshtan, Yu.L....
Quantum Electronics. 52 (2022) 6 - p. 577-579 , 2022

Link: https://doi.org/10.1070/..

6

InGaAs/InGaAsP/InP heterostructures for high-power photodet..:

, In: 2022 International Conference Laser Optics (ICLO),

Bragin, N.N. ; Svetogorov, V.N. ; Ryaboshtan, Yu. L.... - p. 1-1 , 2022

Link: https://doi.org/10.1109/..

7

Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450 –..:

Volkov, N.A. ; Svetogorov, V.N. ; Ryaboshtan, Yu.L....
Quantum Electronics. 51 (2021) 4 - p. 283-286 , 2021

Link: https://doi.org/10.1070/..

8

High-power AlGaInAs/InP semiconductor lasers with an ultra-..:

Svetogorov, V.N. ; Ryaboshtan, Yu.L. ; Volkov, N.A....
Quantum Electronics. 51 (2021) 10 - p. 909-911 , 2021

Link: https://doi.org/10.1070/..

9

Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with..:

Volkov, N.A. ; Andreev, A.Yu. ; Yarotskaya, I.V....
Quantum Electronics. 51 (2021) 2 - p. 133-136 , 2021

Link: https://doi.org/10.1070/..

10

Energy Barrier Layers and Internal Optical Loss in 1400-160..:

, In: 2020 International Conference Laser Optics (ICLO),

Veselov, D. A. ; Bobretsova, Yu. K. ; Rastegaeva, M. G.... - p. 1-1 , 2020

Link: https://doi.org/10.1109/..

11

AlGaInAs/InP semiconductor lasers with an ultra-narrow wave..:

Svetogorov, V.N. ; Ryaboshtan, Yu.L. ; Ladugin, M.A....
Quantum Electronics. 50 (2020) 12 - p. 1123-1125 , 2020

Link: https://doi.org/10.1070/..

12

Superluminescent diodes in the spectral range of 1.5 – 1.6 ..:

Sabitov, D.R. ; Ryaboshtan, Yu.L. ; Svetogorov, V.N....
Quantum Electronics. 50 (2020) 9 - p. 830-833 , 2020

Link: https://doi.org/10.1070/..

13

1.5 – 1.6 μm semiconductor lasers with an asymmetric period..:

Bagaeva, O.O. ; Danilov, A.I. ; Ivanov, A.V....
Quantum Electronics. 50 (2020) 6 - p. 600-602 , 2020

Link: https://doi.org/10.1070/..

14

Strain-compensated active region of high-power laser diodes..:

, In: 2020 International Conference Laser Optics (ICLO),

Svetogorov, V. N. ; Ryaboshtan, Yu. L. ; Ladugin, M. A.... - p. 1-1 , 2020

Link: https://doi.org/10.1109/..

15

Study of Photodiodes Based on the InGaAs Structure with a B..:

Boltar, K. O. ; Irodov, N. A. ; Sednev, M. V....
Journal of Communications Technology and Electronics. 64 (2019) 3 - p. 283-285 , 2019

Link: https://doi.org/10.1134/..