E-LIB Suche - Ergebnisse für: Ryu, Hojoon

1

Stable High Temperature Operation of p-GaN Gate HEMT With E..:

Lee, Hanwool ; Ryu, Hojoon ; Kang, Junzhe.
IEEE Electron Device Letters. 45 (2024) 3 - p. 312-315 , 2024

Link: https://doi.org/10.1109/..

2

Content-Addressable Memories and Transformable Logic Circui..:

Zhao, Zijing ; Kang, Junzhe ; Tunga, Ashwin...
ACS Nano. , 2024

Link: https://doi.org/10.1021/..

3

Low-Thermal-Budget Ferroelectric Field-Effect Transistors B..:

Ryu, Hojoon ; Kang, Junzhe ; Park, Minseong...
ACS Applied Materials & Interfaces. 15 (2023) 46 - p. 53671-53677 , 2023

Link: https://doi.org/10.1021/..

4

High Temperature Operation of E-Mode and D-Mode AlGaN/GaN M..:

Lee, Hanwool ; Ryu, Hojoon ; Kang, Junzhe.
IEEE Journal of the Electron Devices Society. 11 (2023) - p. 167-173 , 2023

Link: https://doi.org/10.1109/..

5

Thermally hardened AlGaN/GaN MIS-HEMTs based on multilayer ..:

Lee, Hanwool ; Ryu, Hojoon ; Zhu, Wenjuan
Applied Physics Letters. 122 (2023) 11 - p. , 2023

Link: https://doi.org/10.1063/..

6

Nanoscale Devices Based on Two-dimensional and Ferroelectri..:

, In: 2022 Device Research Conference (DRC),

Zhao, Zijing ; Xu, Kai ; Liu, Jialun... - p. 1-2 , 2022

Link: https://doi.org/10.1109/..

7

Nonconventional Analog Comparators Based on Graphene and Fe..:

Liu, Jialun ; Ryu, Hojoon ; Zhu, Wenjuan
IEEE Transactions on Electron Devices. 68 (2021) 3 - p. 1334-1339 , 2021

Link: https://doi.org/10.1109/..

8

Strong Temperature Effect on the Ferroelectric Properties o..:

Zhao, Zijing ; Xu, Kai ; Ryu, Hojoon.
ACS Applied Materials & Interfaces. 12 (2020) 46 - p. 51820-51826 , 2020

Link: https://doi.org/10.1021/..

9

Empowering 2D nanoelectronics via ferroelectricity:

Ryu, Hojoon ; Xu, Kai ; Li, Dawei..
Applied Physics Letters. 117 (2020) 8 - p. , 2020

Link: https://doi.org/10.1063/..

10

Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ ..:

Ryu, Hojoon ; Wu, Haonan ; Rao, Fubo.
Scientific Reports. 9 (2019) 1 - p. , 2019

Link: https://doi.org/10.1038/..

11

Ferroelectric Tunneling Junctions for Neurosynaptic Computi..:

, In: 2019 Device Research Conference (DRC),

Ryu, Hojoon ; Wu, Haonan ; Rao, Fubo. - p. 191-192 , 2019

Link: https://doi.org/10.1109/..

12

Low-Thermal-Budget Ferroelectric Field-Effect Transistors B..:

Ryu, Hojoon ; Kang, Junzhe ; Park, Minseong...
http://arxiv.org/abs/2307.10473. , 2023

Link: http://arxiv.org/abs/230..

13

Content Addressable Memories and Transformable Logic Circui..:

Zhao, Zijing ; Kang, Junzhe ; Tunga, Ashwin...
http://arxiv.org/abs/2307.03660. , 2023

Link: http://arxiv.org/abs/230..

14

Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ ..:

Ryu, Hojoon ; Wu, Haonan ; Rao, Fubo.
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6938512/. , 2019

Link: http://www.ncbi.nlm.nih...

15

Content-Addressable Memories and Transformable Logic Circui..:

Zijing Zhao ; Junzhe Kang ; Ashwin Tunga...
doi:10.1021/acsnano.3c03900.s001. , 2024

Link: https://doi.org/10.1021/..